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Magneto-photoluminescence of stacked self-assembled InAs/GaAs quantum dots

Research output: Contribution to journalJournal articlepeer-review

  • J Maes
  • M Hayne
  • M Henini
  • F Pulizzi
  • A Patane
  • L Eaves
  • V V Moshchalkov
<mark>Journal publication date</mark>30/04/2004
<mark>Journal</mark>Physica B: Condensed Matter
Number of pages4
Pages (from-to)428-431
Publication StatusPublished
<mark>Original language</mark>English


We studied ten-fold stacked layers of self-assembled InAs/GaAs quantum dots by photoluminescence in pulsed magnetic fields. When the interlayer distance is reduced from 9.8 to 5.5 nm, a doubling of the diamagnetic shift for a magnetic field perpendicular to the [0 0 1] direction reveals the onset of electron coupling between the dots in the stack. On reducing the interlayer distance to 3.1 nm, a lower exciton effective mass is seen in addition to the coupling. For such a close stacking, the strain field in and around the dot is completely different from that of a single-layered structure. In particular, the strain inside the InAs dots in the stack is partially relaxed, causing the observed effect. (C) 2004 Elsevier B.V. All rights reserved.