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Micro and Nanoscale Mapping of Electrical Characterization of Graphene and Semiconductor Heterostructures.

Research output: Contribution to conference - Without ISBN/ISSN Abstract

Published
Publication date24/07/2016
Number of pages1
Pages52
<mark>Original language</mark>English
EventANM2016: 7th International Conference on Advanced Nanomaterials - Aveiro, Portugal
Duration: 25/07/201627/07/2016
http://www.rsc.org/events/detail/22757/anm2016-7th-international-conference-on-advanced-nanomaterials

Conference

ConferenceANM2016: 7th International Conference on Advanced Nanomaterials
Abbreviated titleANM2016
CountryPortugal
CityAveiro
Period25/07/1627/07/16
Internet address

Abstract

Graphene and 2D materials have proven to be promising materials to be used to fabricate heterostructures, and also promising candidate to be used in combination with optoelectronic devices, due to their unique electronic properties1. Here, the electrical properties of heterostructures, as well as the specific contacts area onto graphene are investigated by using properly designed test patterns. We firstly use PlayStation micro-probing (PSM) for macroscopic characterisations. Secondly, High- spatial resolution current mapping needed to provide an insight into the nanoscale mechanisms of electrical transport. We use scanning probe microscopy (SPM) as well as scanning gate microscopy (SGM), with a conductive diamond tip directly access to nano-resolution structures both topographically and electrically, with illumination and dark regimes. Additionally, we plan to report measurement in 2D materials heterostructures and their photoresponse on this regimes.