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Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum-well light-emitting diodes. .

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<mark>Journal publication date</mark>28/08/2006
<mark>Journal</mark>Applied Physics Letters
Issue number9
Pages (from-to)091110
<mark>Original language</mark>English


Room-temperature electroluminescence is reported from InAsSb multiple-quantum-well light-emitting diodes. The diodes exhibited emission in the mid-infrared peaking near 4 µm. The spectral dependence on injection current at 4 K was investigated and two transitions were identified, centered at 4.05 and 3.50 µm, which are associated with the eigenstates of the confined holes inside the quantum well. The use of an Sb predeposition and As flux surface exposure during epitaxial growth was observed to have a major effect on the electroluminescence output.

Bibliographic note

Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (9), 2006 and may be found at http://link.aip.org/link/?APPLAB/89/091110/1