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Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>13/07/2009
<mark>Journal</mark>Applied Physics Letters
Issue number2
Pages (from-to)021110
<mark>Original language</mark>English


InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.