12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Midinfrared electroluminescence from pentanary-...
View graph of relations

« Back

Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

Research output: Contribution to journalJournal article

Published

Journal publication date13/07/2009
JournalApplied Physics Letters
Journal number2
Volume95
Pages021110
Original languageEnglish

Abstract

InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.