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Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. / Cook, N. B.; Krier, A.
In: Applied Physics Letters, Vol. 95, No. 2, 13.07.2009, p. 021110.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cook, NB & Krier, A 2009, 'Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.', Applied Physics Letters, vol. 95, no. 2, pp. 021110. https://doi.org/10.1063/1.3177193

APA

Cook, N. B., & Krier, A. (2009). Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Applied Physics Letters, 95(2), 021110. https://doi.org/10.1063/1.3177193

Vancouver

Cook NB, Krier A. Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. Applied Physics Letters. 2009 Jul 13;95(2):021110. doi: 10.1063/1.3177193

Author

Cook, N. B. ; Krier, A. / Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes. In: Applied Physics Letters. 2009 ; Vol. 95, No. 2. pp. 021110.

Bibtex

@article{47bed8b6940a441596550e53eb24a351,
title = "Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.",
abstract = "InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.",
author = "Cook, {N. B.} and A. Krier",
year = "2009",
month = jul,
day = "13",
doi = "10.1063/1.3177193",
language = "English",
volume = "95",
pages = "021110",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - Midinfrared electroluminescence from pentanary-quaternary heterojunction light-emitting diodes.

AU - Cook, N. B.

AU - Krier, A.

PY - 2009/7/13

Y1 - 2009/7/13

N2 - InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.

AB - InAs-GaInAsSbP-InAsSbP double heterojunction light-emitting diodes were fabricated which exhibit electroluminescence near 3.7 mu m at room temperature. Radiative recombination from band-tail states associated with alloy disorder and localized potential fluctuations was observed, as well as emission from states localized at the InAs-pentanary heterointerface.

U2 - 10.1063/1.3177193

DO - 10.1063/1.3177193

M3 - Journal article

VL - 95

SP - 021110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 2

ER -