Standard
Harvard
Krier, A, Smirnov, VM, Batty, PJ
, Yin, M, Lai, KT, Rybchenko, S, Haywood, SK, Vasil'ev, VI, Gagis, GS & Kuchinskii, VI 2007, '
Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .',
Applied Physics Letters, vol. 91, no. 8, pp. 082102.
https://doi.org/10.1063/1.2768892
APA
Krier, A., Smirnov, V. M., Batty, P. J.
, Yin, M., Lai, K. T., Rybchenko, S., Haywood, S. K., Vasil'ev, V. I., Gagis, G. S., & Kuchinskii, V. I. (2007).
Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. . Applied Physics Letters,
91(8), 082102.
https://doi.org/10.1063/1.2768892
Vancouver
Author
Bibtex
@article{86fbe011d273499f91f9b79d2ddb1a32,
title = "Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .",
abstract = "Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.",
author = "A. Krier and Smirnov, {V. M.} and Batty, {P. J.} and M. Yin and Lai, {K. T.} and S. Rybchenko and Haywood, {S. K.} and Vasil'ev, {V. I.} and Gagis, {G. S.} and Kuchinskii, {V. I.}",
note = "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (8), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/082102/1",
year = "2007",
month = aug,
day = "20",
doi = "10.1063/1.2768892",
language = "English",
volume = "91",
pages = "082102",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "8",
}
RIS
TY - JOUR
T1 - Midinfrared photoluminescence and compositional modulation in pentanary GaInAsPSb alloys grown by liquid phase epitaxy. .
AU - Krier, A.
AU - Smirnov, V. M.
AU - Batty, P. J.
AU - Yin, M.
AU - Lai, K. T.
AU - Rybchenko, S.
AU - Haywood, S. K.
AU - Vasil'ev, V. I.
AU - Gagis, G. S.
AU - Kuchinskii, V. I.
N1 - Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 91 (8), 2007 and may be found at http://link.aip.org/link/?APPLAB/91/082102/1
PY - 2007/8/20
Y1 - 2007/8/20
N2 - Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.
AB - Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4 µm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.
U2 - 10.1063/1.2768892
DO - 10.1063/1.2768892
M3 - Journal article
VL - 91
SP - 082102
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 1077-3118
IS - 8
ER -
