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Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

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Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires. / Chen, Xiren; Zhuang, Qiandong; Alradhi, Hayfaa; Jin, Zhiming; Zhu, Liangqing; Chen, Xin; Shao, Jun.

In: Nano Letters, Vol. 17, No. 3, 08.03.2017, p. 1545-1551.

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@article{5a4d3f4f799f4baf8c160177918b36af,
title = "Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires",
abstract = "Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher-energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier–phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.",
author = "Xiren Chen and Qiandong Zhuang and Hayfaa Alradhi and Zhiming Jin and Liangqing Zhu and Xin Chen and Jun Shao",
year = "2017",
month = mar,
day = "8",
doi = "10.1021/acs.nanolett.6b04629",
language = "English",
volume = "17",
pages = "1545--1551",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires

AU - Chen, Xiren

AU - Zhuang, Qiandong

AU - Alradhi, Hayfaa

AU - Jin, Zhiming

AU - Zhu, Liangqing

AU - Chen, Xin

AU - Shao, Jun

PY - 2017/3/8

Y1 - 2017/3/8

N2 - Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher-energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier–phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

AB - Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher-energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier–phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

U2 - 10.1021/acs.nanolett.6b04629

DO - 10.1021/acs.nanolett.6b04629

M3 - Journal article

VL - 17

SP - 1545

EP - 1551

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 3

ER -