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Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808

Research output: Contribution in Book/Report/ProceedingsPaper

Published

Publication date2006
Host publicationNanomodeling II
EditorsA Lakhtakia, SA Maksimenko
Place of publicationBELLINGHAM
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Pages32808-32808
Number of pages11
ISBN (Print)0-8194-6407-4
Original languageEnglish

Conference

ConferenceConference on Nanomodeling II
CitySan Diego
Period13/08/0615/08/06

Conference

ConferenceConference on Nanomodeling II
CitySan Diego
Period13/08/0615/08/06

Abstract

In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Greens function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes.

The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modem micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.