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Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808

Research output: Contribution in Book/Report/ProceedingsPaper


Publication date2006
Host publicationNanomodeling II
EditorsA Lakhtakia, SA Maksimenko
Place of publicationBELLINGHAM
Number of pages11
ISBN (Print)0-8194-6407-4
<mark>Original language</mark>English


ConferenceConference on Nanomodeling II
CitySan Diego


ConferenceConference on Nanomodeling II
CitySan Diego


In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Greens function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes.

The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modem micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.