Home > Research > Publications & Outputs > Modelling of carbon nanotube-based devices: fro...
View graph of relations

Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Published

Standard

Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808. / Di Carlo, Aldo; Pecchia, Alessandro; Petrolati, Eleonora et al.
Nanomodeling II. ed. / A Lakhtakia; SA Maksimenko. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 2006. p. 32808-32808.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Di Carlo, A, Pecchia, A, Petrolati, E & Paoloni, C 2006, Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808. in A Lakhtakia & SA Maksimenko (eds), Nanomodeling II. SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, pp. 32808-32808, Conference on Nanomodeling II, San Diego, 13/08/06. https://doi.org/10.1117/12.680305

APA

Di Carlo, A., Pecchia, A., Petrolati, E., & Paoloni, C. (2006). Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808. In A. Lakhtakia, & SA. Maksimenko (Eds.), Nanomodeling II (pp. 32808-32808). SPIE-INT SOC OPTICAL ENGINEERING. https://doi.org/10.1117/12.680305

Vancouver

Di Carlo A, Pecchia A, Petrolati E, Paoloni C. Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808. In Lakhtakia A, Maksimenko SA, editors, Nanomodeling II. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING. 2006. p. 32808-32808 doi: 10.1117/12.680305

Author

Di Carlo, Aldo ; Pecchia, Alessandro ; Petrolati, Eleonora et al. / Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808. Nanomodeling II. editor / A Lakhtakia ; SA Maksimenko. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING, 2006. pp. 32808-32808

Bibtex

@inproceedings{0a62021b71794b1799c5934543acc1ba,
title = "Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808",
abstract = "In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Greens function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes.The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modem micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.",
author = "{Di Carlo}, Aldo and Alessandro Pecchia and Eleonora Petrolati and Claudio Paoloni",
year = "2006",
doi = "10.1117/12.680305",
language = "English",
isbn = "0-8194-6407-4",
pages = "32808--32808",
editor = "A Lakhtakia and SA Maksimenko",
booktitle = "Nanomodeling II",
publisher = "SPIE-INT SOC OPTICAL ENGINEERING",
note = "Conference on Nanomodeling II ; Conference date: 13-08-2006 Through 15-08-2006",

}

RIS

TY - GEN

T1 - Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808

AU - Di Carlo, Aldo

AU - Pecchia, Alessandro

AU - Petrolati, Eleonora

AU - Paoloni, Claudio

PY - 2006

Y1 - 2006

N2 - In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Greens function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes.The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modem micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.

AB - In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Greens function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes.The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modem micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.

U2 - 10.1117/12.680305

DO - 10.1117/12.680305

M3 - Conference contribution/Paper

SN - 0-8194-6407-4

SP - 32808

EP - 32808

BT - Nanomodeling II

A2 - Lakhtakia, A

A2 - Maksimenko, SA

PB - SPIE-INT SOC OPTICAL ENGINEERING

CY - BELLINGHAM

T2 - Conference on Nanomodeling II

Y2 - 13 August 2006 through 15 August 2006

ER -