Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review
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TY - GEN
T1 - Modelling of carbon nanotube-based devices: from nanoFETs to THz emitters - art. no. 632808
AU - Di Carlo, Aldo
AU - Pecchia, Alessandro
AU - Petrolati, Eleonora
AU - Paoloni, Claudio
PY - 2006
Y1 - 2006
N2 - In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Greens function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes.The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modem micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.
AB - In the first part of the present contribution, we will report on transport calculations of nanoscaled devices based on Carbon Nanotubes obtained via self-consistent density-functional method coupled with non-equilibrium Greens function approaches. In particular, density functional tight-binding techniques are very promising due to their intrinsic efficiency. This scheme allows treatment of systems comprising a large number of atoms and enables the computation of the current flowing between two or more contacts in a fully self-consistent manner with the open boundary conditions that naturally arise in transport problems. We will give a description of this methodology and application to field effect transistor based on Carbon nanotubes.The advances in manufacturing technology are allowing new opportunities even for vacuum electron devices producing radio-frequency radiation. Modem micro and nano-technologies can overcome the typical severe limitations of vacuum tube devices. As an example, Carbon Nanotubes used as cold emitters in micron-scaled triodes allow for frequency generation up to THz region. The purpose of the second part of this contribution will be a description of the modelling of Carbon Nanotube based vacuum devices such as triodes. We will present the calculation of important figures of merit and possible realizations.
U2 - 10.1117/12.680305
DO - 10.1117/12.680305
M3 - Conference contribution/Paper
SN - 0-8194-6407-4
SP - 32808
EP - 32808
BT - Nanomodeling II
A2 - Lakhtakia, A
A2 - Maksimenko, SA
PB - SPIE-INT SOC OPTICAL ENGINEERING
CY - BELLINGHAM
T2 - Conference on Nanomodeling II
Y2 - 13 August 2006 through 15 August 2006
ER -