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Keywords
Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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In: Journal of Materials Science, Vol. 54, No. 4, 01.02.2019, p. 3230-3241.
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures
AU - Khan, Atif
AU - Herrera, M
AU - Pizarro, J
AU - Galindo, P. L.
AU - Carrington, Peter James
AU - Fujita, Hiromi
AU - Krier, Anthony
AU - Molina, S. I.
N1 - The final publication is available at Springer via http://dx.doi.org/10.1007/s10853-018-3073-y
PY - 2019/2/1
Y1 - 2019/2/1
N2 - The qHAADF method allows the quantification of the composition at atomic column resolution in semiconductor materials by comparing the HAADF-STEM intensities between a region of interest to a region of the material of known composition. However, the application of this qHAADF approach requires both regions to be differentiable and included in the same micrograph at close proximity. This limits the application of this approach to certain materials and magnifications where this requirement is fulfilled. In this work, we extend the qHAADF method to analyses where the reference region is imaged in a separate micrograph. The validity of this modified method is proved by comparison to the original qHAADF approach using HAADF-STEM simulated images of the semiconductor heterostructure InSb/InAs. Additionally, the methods are applied successfully to experimental images both of a simple InSb/InAs interface and of a complex InSb/GaSb heterostructure, justifying the significance of the modified method over the original method.
AB - The qHAADF method allows the quantification of the composition at atomic column resolution in semiconductor materials by comparing the HAADF-STEM intensities between a region of interest to a region of the material of known composition. However, the application of this qHAADF approach requires both regions to be differentiable and included in the same micrograph at close proximity. This limits the application of this approach to certain materials and magnifications where this requirement is fulfilled. In this work, we extend the qHAADF method to analyses where the reference region is imaged in a separate micrograph. The validity of this modified method is proved by comparison to the original qHAADF approach using HAADF-STEM simulated images of the semiconductor heterostructure InSb/InAs. Additionally, the methods are applied successfully to experimental images both of a simple InSb/InAs interface and of a complex InSb/GaSb heterostructure, justifying the significance of the modified method over the original method.
KW - HAADF-STEM
KW - Modified qHAADF
KW - Atomic-column resolution
KW - Quantitative composition analysis
KW - Semiconductors
U2 - 10.1007/s10853-018-3073-y
DO - 10.1007/s10853-018-3073-y
M3 - Journal article
VL - 54
SP - 3230
EP - 3241
JO - Journal of Materials Science
JF - Journal of Materials Science
SN - 0022-2461
IS - 4
ER -