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Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

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Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. . / Arivuoli, D.; Lawson, N. S.; Krier, A. et al.
In: Materials Chemistry and Physics, Vol. 66, No. 2 - 3, 16.10.2000, p. 207-212.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Arivuoli, D, Lawson, NS, Krier, A, Attolini, G & Pelosi, C 2000, 'Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .', Materials Chemistry and Physics, vol. 66, no. 2 - 3, pp. 207-212. https://doi.org/10.1016/S0254-0584(00)00337-0

APA

Arivuoli, D., Lawson, N. S., Krier, A., Attolini, G., & Pelosi, C. (2000). Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. . Materials Chemistry and Physics, 66(2 - 3), 207-212. https://doi.org/10.1016/S0254-0584(00)00337-0

Vancouver

Arivuoli D, Lawson NS, Krier A, Attolini G, Pelosi C. Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. . Materials Chemistry and Physics. 2000 Oct 16;66(2 - 3):207-212. doi: 10.1016/S0254-0584(00)00337-0

Author

Arivuoli, D. ; Lawson, N. S. ; Krier, A. et al. / Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. . In: Materials Chemistry and Physics. 2000 ; Vol. 66, No. 2 - 3. pp. 207-212.

Bibtex

@article{019409925f8c427dbc89ffc04a8fc29b,
title = "Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .",
abstract = "Mismatched semiconductor III-V heterostructures are interesting for advanced integrated device fabrication. The surface properties studied by the nanoindentation technique can reveal information about the elastic recovery, relative hardness and in particular surface flow properties. In this work nanoindentation studies have been carried out on GaAs/InP heterostructures grown by metal organic vapour phase epitaxy. The depth of penetration is continuously monitored during loading and unloading. The contour map determined by profilometry and surface analysis by AFM indicates that the material piles up after a particular load. The results of the present investigation along with growth conditions and the effect of lattice mismatch are discussed. (C) 2000 published by Elsevier Science S.A.",
keywords = "Heterostructures, Nanoindentation, Mechanical properties",
author = "D. Arivuoli and Lawson, {N. S.} and A. Krier and G. Attolini and C. Pelosi",
year = "2000",
month = oct,
day = "16",
doi = "10.1016/S0254-0584(00)00337-0",
language = "English",
volume = "66",
pages = "207--212",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "2 - 3",

}

RIS

TY - JOUR

T1 - Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .

AU - Arivuoli, D.

AU - Lawson, N. S.

AU - Krier, A.

AU - Attolini, G.

AU - Pelosi, C.

PY - 2000/10/16

Y1 - 2000/10/16

N2 - Mismatched semiconductor III-V heterostructures are interesting for advanced integrated device fabrication. The surface properties studied by the nanoindentation technique can reveal information about the elastic recovery, relative hardness and in particular surface flow properties. In this work nanoindentation studies have been carried out on GaAs/InP heterostructures grown by metal organic vapour phase epitaxy. The depth of penetration is continuously monitored during loading and unloading. The contour map determined by profilometry and surface analysis by AFM indicates that the material piles up after a particular load. The results of the present investigation along with growth conditions and the effect of lattice mismatch are discussed. (C) 2000 published by Elsevier Science S.A.

AB - Mismatched semiconductor III-V heterostructures are interesting for advanced integrated device fabrication. The surface properties studied by the nanoindentation technique can reveal information about the elastic recovery, relative hardness and in particular surface flow properties. In this work nanoindentation studies have been carried out on GaAs/InP heterostructures grown by metal organic vapour phase epitaxy. The depth of penetration is continuously monitored during loading and unloading. The contour map determined by profilometry and surface analysis by AFM indicates that the material piles up after a particular load. The results of the present investigation along with growth conditions and the effect of lattice mismatch are discussed. (C) 2000 published by Elsevier Science S.A.

KW - Heterostructures

KW - Nanoindentation

KW - Mechanical properties

U2 - 10.1016/S0254-0584(00)00337-0

DO - 10.1016/S0254-0584(00)00337-0

M3 - Journal article

VL - 66

SP - 207

EP - 212

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 2 - 3

ER -