Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Nanoindentation studies of MOVPE grown GaAs/InP heterostructures. .
AU - Arivuoli, D.
AU - Lawson, N. S.
AU - Krier, A.
AU - Attolini, G.
AU - Pelosi, C.
PY - 2000/10/16
Y1 - 2000/10/16
N2 - Mismatched semiconductor III-V heterostructures are interesting for advanced integrated device fabrication. The surface properties studied by the nanoindentation technique can reveal information about the elastic recovery, relative hardness and in particular surface flow properties. In this work nanoindentation studies have been carried out on GaAs/InP heterostructures grown by metal organic vapour phase epitaxy. The depth of penetration is continuously monitored during loading and unloading. The contour map determined by profilometry and surface analysis by AFM indicates that the material piles up after a particular load. The results of the present investigation along with growth conditions and the effect of lattice mismatch are discussed. (C) 2000 published by Elsevier Science S.A.
AB - Mismatched semiconductor III-V heterostructures are interesting for advanced integrated device fabrication. The surface properties studied by the nanoindentation technique can reveal information about the elastic recovery, relative hardness and in particular surface flow properties. In this work nanoindentation studies have been carried out on GaAs/InP heterostructures grown by metal organic vapour phase epitaxy. The depth of penetration is continuously monitored during loading and unloading. The contour map determined by profilometry and surface analysis by AFM indicates that the material piles up after a particular load. The results of the present investigation along with growth conditions and the effect of lattice mismatch are discussed. (C) 2000 published by Elsevier Science S.A.
KW - Heterostructures
KW - Nanoindentation
KW - Mechanical properties
U2 - 10.1016/S0254-0584(00)00337-0
DO - 10.1016/S0254-0584(00)00337-0
M3 - Journal article
VL - 66
SP - 207
EP - 212
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
SN - 0254-0584
IS - 2 - 3
ER -