Nanometer-scale mechanical imaging of aluminum damascene interconnect structures in a low-dielectric-constant polymer.

Physics

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https://doi.org/10.1063/1.1447330
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Keywords

Keywords aluminium, integrated circuit interconnections, polymer films, permittivity, integrated circuit testing, ultrasonic imaging, acoustic microscopy, sputter etching, elastic moduli

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Nanometer-scale mechanical imaging of aluminum damascene interconnect structures in a low-dielectric-constant polymer. / Kolosov, O.; Briggs, G. A. D.; Geer, R. E. et al.
In: Journal of Applied Physics, Vol. 91, No. 7, 01.04.2002, p. 4549-4555.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Bibtex

@article{60845cbd2d6445babfbd046b4c476706,

title = "Nanometer-scale mechanical imaging of aluminum damascene interconnect structures in a low-dielectric-constant polymer.",

abstract = "Ultrasonic-force microscopy (UFM) has been employed to carry out nanometer-scale mechanical imaging of integrated circuit (IC) test structures comprised of 0.32-µm-wide aluminum interconnect lines inlaid in a low-dielectric-constant (low-k) polymer film. Such inlaid metal interconnects are typically referred to as damascene structures. UFM clearly differentiates the metal and polymer regions within this damascene IC test structure on the basis of elastic modulus with a spatial resolution10 nm. In addition, this technique reveals an increase in the polymer elastic modulus at the metal/polymer interface. This nanometer-scale hardening corresponds to compositional modification of the polymer from the reactive ion etch (RIE) process used to form trenches in the polymer film prior to metal deposition. The reported direct, nondestructive nanometer-scale mechanical imaging of RIE-process-induced modifications of low-k polymers in IC test structures offers expanded opportunities for mechanical metrology and reliability evaluation of such materials.",

keywords = "Keywords aluminium, integrated circuit interconnections, polymer films, permittivity, integrated circuit testing, ultrasonic imaging, acoustic microscopy, sputter etching, elastic moduli",

author = "O. Kolosov and Briggs, {G. A. D.} and Geer, {R. E.} and Shekhawat, {G. S.}",

note = "Nanometre scale features of advanced VLSI (very large scale integration) metal-glass-polymer structures differing by physical properties (elastic moduli) were reliably observed for the first time using new force microscopy mode. Paper enabled new approach used presently by several semiconductor manufacturers. RAE_import_type : Journal article RAE_uoa_type : Physics",

year = "2002",

month = apr,

day = "1",

doi = "10.1063/1.1447330",

language = "English",

volume = "91",

pages = "4549--4555",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "AMER INST PHYSICS",

number = "7",

}

RIS

TY - JOUR

T1 - Nanometer-scale mechanical imaging of aluminum damascene interconnect structures in a low-dielectric-constant polymer.

AU - Kolosov, O.

AU - Briggs, G. A. D.

AU - Geer, R. E.

AU - Shekhawat, G. S.

N1 - Nanometre scale features of advanced VLSI (very large scale integration) metal-glass-polymer structures differing by physical properties (elastic moduli) were reliably observed for the first time using new force microscopy mode. Paper enabled new approach used presently by several semiconductor manufacturers. RAE_import_type : Journal article RAE_uoa_type : Physics

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Ultrasonic-force microscopy (UFM) has been employed to carry out nanometer-scale mechanical imaging of integrated circuit (IC) test structures comprised of 0.32-µm-wide aluminum interconnect lines inlaid in a low-dielectric-constant (low-k) polymer film. Such inlaid metal interconnects are typically referred to as damascene structures. UFM clearly differentiates the metal and polymer regions within this damascene IC test structure on the basis of elastic modulus with a spatial resolution10 nm. In addition, this technique reveals an increase in the polymer elastic modulus at the metal/polymer interface. This nanometer-scale hardening corresponds to compositional modification of the polymer from the reactive ion etch (RIE) process used to form trenches in the polymer film prior to metal deposition. The reported direct, nondestructive nanometer-scale mechanical imaging of RIE-process-induced modifications of low-k polymers in IC test structures offers expanded opportunities for mechanical metrology and reliability evaluation of such materials.

AB - Ultrasonic-force microscopy (UFM) has been employed to carry out nanometer-scale mechanical imaging of integrated circuit (IC) test structures comprised of 0.32-µm-wide aluminum interconnect lines inlaid in a low-dielectric-constant (low-k) polymer film. Such inlaid metal interconnects are typically referred to as damascene structures. UFM clearly differentiates the metal and polymer regions within this damascene IC test structure on the basis of elastic modulus with a spatial resolution10 nm. In addition, this technique reveals an increase in the polymer elastic modulus at the metal/polymer interface. This nanometer-scale hardening corresponds to compositional modification of the polymer from the reactive ion etch (RIE) process used to form trenches in the polymer film prior to metal deposition. The reported direct, nondestructive nanometer-scale mechanical imaging of RIE-process-induced modifications of low-k polymers in IC test structures offers expanded opportunities for mechanical metrology and reliability evaluation of such materials.

KW - Keywords aluminium

KW - integrated circuit interconnections

KW - polymer films

KW - permittivity

KW - integrated circuit testing

KW - ultrasonic imaging

KW - acoustic microscopy

KW - sputter etching

KW - elastic moduli

U2 - 10.1063/1.1447330

DO - 10.1063/1.1447330

M3 - Journal article

VL - 91

SP - 4549

EP - 4555

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 1089-7550

IS - 7

ER -

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