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Nanoscale elastic imaging and mechanical modulus measurements of aluminum/low-k dielectric interconnect structures

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

Publication date2001
Host publicationCharacterization and metrology for ULSI Technology 2000, International Conference
EditorsDavid G. Seiler, A. C. Diebold, T. J. Shaffner, R. McDonald, W. M. Bullis, P. J. Smith, E. M. Secula
Place of publicationMelville, New York
PublisherAmerican Institute of Physics
Pages449-452
Number of pages4
ISBN (Print)156396967X, 9781563969676
Original languageEnglish

Conference

ConferenceInternational Conference on Characterization and Metrology for ULSI Technology
CityGAITHERSBURG
Period26/06/0029/06/00

Conference

ConferenceInternational Conference on Characterization and Metrology for ULSI Technology
CityGAITHERSBURG
Period26/06/0029/06/00

Abstract

One of the most difficult challenges in low-k integration in IC processing concerns the significant mismatch of mechanical properties between metals and most low-k dielectrics. Previously, it has not been possible to image on a nanometer length scale the local variation of mechanical properties near dielectric/liner and liner/metal interfaces. Such an ability would greatly facilitate thermal and bias-stress reliability analysis of single and multi-level low-k metallization structures by locating variations in local material modulus due to local compositional variations, stress concentration, etc... Pursuant to this, we report the development of a new technique to image such properties based on ultrasonic force microscopy (UFM). UFM utilizes an ultrasonic excitation vibration combined with conventional scanning atomic force microscopy (AEM) to probe elastic variations of a broad range of materials.