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Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

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Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. / Das, S. K.; Das, T. D.; Dhar, S. et al.
In: Infrared Physics and Technology, Vol. 55, No. 1, 01.2012, p. 156-160.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Das, SK, Das, TD, Dhar, S, de la Mare, M & Krier, A 2012, 'Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy', Infrared Physics and Technology, vol. 55, no. 1, pp. 156-160. https://doi.org/10.1016/j.infrared.2011.11.003

APA

Das, S. K., Das, T. D., Dhar, S., de la Mare, M., & Krier, A. (2012). Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared Physics and Technology, 55(1), 156-160. https://doi.org/10.1016/j.infrared.2011.11.003

Vancouver

Das SK, Das TD, Dhar S, de la Mare M, Krier A. Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. Infrared Physics and Technology. 2012 Jan;55(1):156-160. doi: 10.1016/j.infrared.2011.11.003

Author

Das, S. K. ; Das, T. D. ; Dhar, S. et al. / Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy. In: Infrared Physics and Technology. 2012 ; Vol. 55, No. 1. pp. 156-160.

Bibtex

@article{ffe1b7c0b3de4292a02caae6d04671bb,
title = "Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy",
abstract = "We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.",
keywords = "Infrared photoluminescence, Bismuth compounds, Liquid phase epitaxy , Crystallites , Characterization , Solubility",
author = "Das, {S. K.} and Das, {T. D.} and S. Dhar and {de la Mare}, M. and A. Krier",
year = "2012",
month = jan,
doi = "10.1016/j.infrared.2011.11.003",
language = "English",
volume = "55",
pages = "156--160",
journal = "Infrared Physics and Technology",
issn = "1350-4495",
publisher = "Elsevier",
number = "1",

}

RIS

TY - JOUR

T1 - Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy

AU - Das, S. K.

AU - Das, T. D.

AU - Dhar, S.

AU - de la Mare, M.

AU - Krier, A.

PY - 2012/1

Y1 - 2012/1

N2 - We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.

AB - We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.

KW - Infrared photoluminescence

KW - Bismuth compounds

KW - Liquid phase epitaxy

KW - Crystallites

KW - Characterization

KW - Solubility

U2 - 10.1016/j.infrared.2011.11.003

DO - 10.1016/j.infrared.2011.11.003

M3 - Journal article

VL - 55

SP - 156

EP - 160

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

SN - 1350-4495

IS - 1

ER -