Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
AU - Das, S. K.
AU - Das, T. D.
AU - Dhar, S.
AU - de la Mare, M.
AU - Krier, A.
PY - 2012/1
Y1 - 2012/1
N2 - We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.
AB - We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.
KW - Infrared photoluminescence
KW - Bismuth compounds
KW - Liquid phase epitaxy
KW - Crystallites
KW - Characterization
KW - Solubility
U2 - 10.1016/j.infrared.2011.11.003
DO - 10.1016/j.infrared.2011.11.003
M3 - Journal article
VL - 55
SP - 156
EP - 160
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
SN - 1350-4495
IS - 1
ER -