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Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

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Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. . / Krier, A.; Huang, X. L.
In: Applied Physics Letters, Vol. 86, No. 6, 07.02.2005, p. 061113.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A & Huang, XL 2005, 'Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .', Applied Physics Letters, vol. 86, no. 6, pp. 061113. https://doi.org/10.1063/1.1863446

APA

Krier, A., & Huang, X. L. (2005). Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. . Applied Physics Letters, 86(6), 061113. https://doi.org/10.1063/1.1863446

Vancouver

Krier A, Huang XL. Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. . Applied Physics Letters. 2005 Feb 7;86(6):061113. doi: 10.1063/1.1863446

Author

Krier, A. ; Huang, X. L. / Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. . In: Applied Physics Letters. 2005 ; Vol. 86, No. 6. pp. 061113.

Bibtex

@article{cf4284234ed043549fe32457c1ea0670,
title = "Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .",
abstract = "Negative differential resistance has been observed from InAs homojunction light-emitting diodes grown using liquid-phase epitaxy at 455 °C. The devices were characterized using current–voltage (I–V) and electroluminescence spectroscopy measurements to obtain information about structure defects in InAs. Two distinct negative differential resistance regions were observed in the forward bias I–V characteristic, consistent with carriers tunnelling into defect levels within the InAs band gap. At large forward bias, carrier injection into the defect levels resulted in electroluminescence peaking at 372 meV and then at 392 meV with increasing current. Analysis based on a native lattice complex defect indicates that carriers recombine via the defect levels at temperatures up to 175 K.",
author = "A. Krier and Huang, {X. L.}",
note = "Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 86 (6), 2005 and may be found at http://link.aip.org/link/?APPLAB/86/061113/1",
year = "2005",
month = feb,
day = "7",
doi = "10.1063/1.1863446",
language = "English",
volume = "86",
pages = "061113",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "6",

}

RIS

TY - JOUR

T1 - Negative differential resistance and electroluminescence from InAs light-emitting diodes grown by liquid-phase epitaxy. .

AU - Krier, A.

AU - Huang, X. L.

N1 - Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 86 (6), 2005 and may be found at http://link.aip.org/link/?APPLAB/86/061113/1

PY - 2005/2/7

Y1 - 2005/2/7

N2 - Negative differential resistance has been observed from InAs homojunction light-emitting diodes grown using liquid-phase epitaxy at 455 °C. The devices were characterized using current–voltage (I–V) and electroluminescence spectroscopy measurements to obtain information about structure defects in InAs. Two distinct negative differential resistance regions were observed in the forward bias I–V characteristic, consistent with carriers tunnelling into defect levels within the InAs band gap. At large forward bias, carrier injection into the defect levels resulted in electroluminescence peaking at 372 meV and then at 392 meV with increasing current. Analysis based on a native lattice complex defect indicates that carriers recombine via the defect levels at temperatures up to 175 K.

AB - Negative differential resistance has been observed from InAs homojunction light-emitting diodes grown using liquid-phase epitaxy at 455 °C. The devices were characterized using current–voltage (I–V) and electroluminescence spectroscopy measurements to obtain information about structure defects in InAs. Two distinct negative differential resistance regions were observed in the forward bias I–V characteristic, consistent with carriers tunnelling into defect levels within the InAs band gap. At large forward bias, carrier injection into the defect levels resulted in electroluminescence peaking at 372 meV and then at 392 meV with increasing current. Analysis based on a native lattice complex defect indicates that carriers recombine via the defect levels at temperatures up to 175 K.

U2 - 10.1063/1.1863446

DO - 10.1063/1.1863446

M3 - Journal article

VL - 86

SP - 061113

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 6

ER -