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Nondeterministic response to a challenge

Research output: Patent

Published

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Nondeterministic response to a challenge. / Young, Robert James (Inventor); Bernardo Gavito, Ramon (Inventor).

IPC No.: G06F7/58. Patent No.: GB2548428 WO2018029440 (A1) . Sep 20, 2017.

Research output: Patent

Harvard

Young, RJ & Bernardo Gavito, R Sep. 20 2017, Nondeterministic response to a challenge, Patent No. GB2548428 WO2018029440 (A1) , IPC No. G06F7/58.

APA

Young, R. J., & Bernardo Gavito, R. (2017). IPC No. G06F7/58. Nondeterministic response to a challenge. (Patent No. GB2548428 WO2018029440 (A1) ).

Vancouver

Author

Young, Robert James (Inventor) ; Bernardo Gavito, Ramon (Inventor). / Nondeterministic response to a challenge. IPC No.: G06F7/58. Patent No.: GB2548428 WO2018029440 (A1) . Sep 20, 2017.

Bibtex

@misc{101ec015ad72496c9a6dca0c0c580de0,
title = "Nondeterministic response to a challenge",
abstract = "A device for generating a nondeterministic response to a challenge (e.g. for use in a random number generator), the device comprises: a structure exhibiting a nondeterministic electrical output response to an electrical input, the device being arranged to facilitate a challenge of the structure to generate the nondeterministic response, by facilitating an electrical measurement of an output of the structure, the nondeterministic response being derivable from that measurement. The structure preferably exhibits negative differential resistance (e.g. resonant tunneling diode; memristor; Gunn diode). The electrical output response preferably is linked to a state-change in the structure, and/or comprises a change in electrical output from a first level to-or-beyond a second, threshold, level. The time taken for the electrical output response to be trigged may be measured, with the non-deterministic response derivable from the time measurement. The structure preferably exhibits quantum mechanical confinement, and is arranged to provide a unique response linked to the atomic makeup of the structure defining the quantum mechanical confinement, in response to the challenge.",
author = "Young, {Robert James} and {Bernardo Gavito}, Ramon",
year = "2017",
month = sep,
day = "20",
language = "English",
type = "Patent",
note = "GB2548428 WO2018029440 (A1) ; G06F7/58",

}

RIS

TY - PAT

T1 - Nondeterministic response to a challenge

AU - Young, Robert James

AU - Bernardo Gavito, Ramon

PY - 2017/9/20

Y1 - 2017/9/20

N2 - A device for generating a nondeterministic response to a challenge (e.g. for use in a random number generator), the device comprises: a structure exhibiting a nondeterministic electrical output response to an electrical input, the device being arranged to facilitate a challenge of the structure to generate the nondeterministic response, by facilitating an electrical measurement of an output of the structure, the nondeterministic response being derivable from that measurement. The structure preferably exhibits negative differential resistance (e.g. resonant tunneling diode; memristor; Gunn diode). The electrical output response preferably is linked to a state-change in the structure, and/or comprises a change in electrical output from a first level to-or-beyond a second, threshold, level. The time taken for the electrical output response to be trigged may be measured, with the non-deterministic response derivable from the time measurement. The structure preferably exhibits quantum mechanical confinement, and is arranged to provide a unique response linked to the atomic makeup of the structure defining the quantum mechanical confinement, in response to the challenge.

AB - A device for generating a nondeterministic response to a challenge (e.g. for use in a random number generator), the device comprises: a structure exhibiting a nondeterministic electrical output response to an electrical input, the device being arranged to facilitate a challenge of the structure to generate the nondeterministic response, by facilitating an electrical measurement of an output of the structure, the nondeterministic response being derivable from that measurement. The structure preferably exhibits negative differential resistance (e.g. resonant tunneling diode; memristor; Gunn diode). The electrical output response preferably is linked to a state-change in the structure, and/or comprises a change in electrical output from a first level to-or-beyond a second, threshold, level. The time taken for the electrical output response to be trigged may be measured, with the non-deterministic response derivable from the time measurement. The structure preferably exhibits quantum mechanical confinement, and is arranged to provide a unique response linked to the atomic makeup of the structure defining the quantum mechanical confinement, in response to the challenge.

M3 - Patent

M1 - GB2548428 WO2018029440 (A1)

ER -