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Nuclear spin pumping under resonant optical excitation in a quantum dot

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Nuclear spin pumping under resonant optical excitation in a quantum dot. / Makhonin, M. N.; Tartakovskii, A. I.; Ebbens, A. et al.
In: Applied Physics Letters, Vol. 93, No. 7, 073113, 18.08.2008, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Makhonin, MN, Tartakovskii, AI, Ebbens, A, Skolnick, MS, Russell, A, Falko, V & Hopkinson, M 2008, 'Nuclear spin pumping under resonant optical excitation in a quantum dot', Applied Physics Letters, vol. 93, no. 7, 073113, pp. -. https://doi.org/10.1063/1.2958221

APA

Makhonin, M. N., Tartakovskii, A. I., Ebbens, A., Skolnick, M. S., Russell, A., Falko, V., & Hopkinson, M. (2008). Nuclear spin pumping under resonant optical excitation in a quantum dot. Applied Physics Letters, 93(7), -. Article 073113. https://doi.org/10.1063/1.2958221

Vancouver

Makhonin MN, Tartakovskii AI, Ebbens A, Skolnick MS, Russell A, Falko V et al. Nuclear spin pumping under resonant optical excitation in a quantum dot. Applied Physics Letters. 2008 Aug 18;93(7):-. 073113. doi: 10.1063/1.2958221

Author

Makhonin, M. N. ; Tartakovskii, A. I. ; Ebbens, A. et al. / Nuclear spin pumping under resonant optical excitation in a quantum dot. In: Applied Physics Letters. 2008 ; Vol. 93, No. 7. pp. -.

Bibtex

@article{a197a1deade24a788fee811fefc52dfd,
title = "Nuclear spin pumping under resonant optical excitation in a quantum dot",
abstract = "We demonstrate nuclear spin pumping in a single InGaAs/GaAs dot embedded in a p-i-n diode in the regime of resonant optical excitation of spin-polarized electron-hole pairs in the lowest energy states of the dot. A nuclear spin pumping mechanism is proposed relevant to the regime of high electric field where carriers escape from the dot by tunneling. The degree of nuclear spin polarization is shown to increase strongly with the applied electric field, controlling the carrier tunneling from the dot, since at low electric fields the dot is blocked for re-excitation due to the slow hole escape. ",
author = "Makhonin, {M. N.} and Tartakovskii, {A. I.} and A. Ebbens and Skolnick, {M. S.} and A. Russell and Vladimir Falko and M. Hopkinson",
year = "2008",
month = aug,
day = "18",
doi = "10.1063/1.2958221",
language = "English",
volume = "93",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "7",

}

RIS

TY - JOUR

T1 - Nuclear spin pumping under resonant optical excitation in a quantum dot

AU - Makhonin, M. N.

AU - Tartakovskii, A. I.

AU - Ebbens, A.

AU - Skolnick, M. S.

AU - Russell, A.

AU - Falko, Vladimir

AU - Hopkinson, M.

PY - 2008/8/18

Y1 - 2008/8/18

N2 - We demonstrate nuclear spin pumping in a single InGaAs/GaAs dot embedded in a p-i-n diode in the regime of resonant optical excitation of spin-polarized electron-hole pairs in the lowest energy states of the dot. A nuclear spin pumping mechanism is proposed relevant to the regime of high electric field where carriers escape from the dot by tunneling. The degree of nuclear spin polarization is shown to increase strongly with the applied electric field, controlling the carrier tunneling from the dot, since at low electric fields the dot is blocked for re-excitation due to the slow hole escape. 

AB - We demonstrate nuclear spin pumping in a single InGaAs/GaAs dot embedded in a p-i-n diode in the regime of resonant optical excitation of spin-polarized electron-hole pairs in the lowest energy states of the dot. A nuclear spin pumping mechanism is proposed relevant to the regime of high electric field where carriers escape from the dot by tunneling. The degree of nuclear spin polarization is shown to increase strongly with the applied electric field, controlling the carrier tunneling from the dot, since at low electric fields the dot is blocked for re-excitation due to the slow hole escape. 

U2 - 10.1063/1.2958221

DO - 10.1063/1.2958221

M3 - Journal article

VL - 93

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 7

M1 - 073113

ER -