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Numerical investigation of quantum wires in bevel-etched heterostructures.

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Numerical investigation of quantum wires in bevel-etched heterostructures. / Giavaras, G.; Jefferson, J. H.; Fearn, M. et al.
In: Semiconductor Science and Technology, Vol. 22, No. 9, 06.08.2007, p. 1025-1032.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Giavaras, G, Jefferson, JH, Fearn, M, Kyriakou, I, Ashley, T & Lambert, CJ 2007, 'Numerical investigation of quantum wires in bevel-etched heterostructures.', Semiconductor Science and Technology, vol. 22, no. 9, pp. 1025-1032. https://doi.org/10.1088/0268-1242/22/9/009

APA

Giavaras, G., Jefferson, J. H., Fearn, M., Kyriakou, I., Ashley, T., & Lambert, C. J. (2007). Numerical investigation of quantum wires in bevel-etched heterostructures. Semiconductor Science and Technology, 22(9), 1025-1032. https://doi.org/10.1088/0268-1242/22/9/009

Vancouver

Giavaras G, Jefferson JH, Fearn M, Kyriakou I, Ashley T, Lambert CJ. Numerical investigation of quantum wires in bevel-etched heterostructures. Semiconductor Science and Technology. 2007 Aug 6;22(9):1025-1032. doi: 10.1088/0268-1242/22/9/009

Author

Giavaras, G. ; Jefferson, J. H. ; Fearn, M. et al. / Numerical investigation of quantum wires in bevel-etched heterostructures. In: Semiconductor Science and Technology. 2007 ; Vol. 22, No. 9. pp. 1025-1032.

Bibtex

@article{a5784de1b62c4e7eb684fb5ec4ea83c9,
title = "Numerical investigation of quantum wires in bevel-etched heterostructures.",
abstract = "We present and study a method to form quantum wires within a bevel-etched semiconductor heterostructure in which n-type quantum wires may be formed either next to a hole-charged region or a depleted quantum well region. By employing Schr{\"o}dinger and Poisson solutions we examine the formation of the confining potential giving rise to a wire and its dependence on layer structure and magnitude of bevel angle. We also demonstrate how the basic idea can be extended to double well heterostructures in order to form additional quantum wires which can be induced in a lateral configuration. Possible advantages of the proposed method and the resulting quantum wires are discussed.",
author = "G. Giavaras and Jefferson, {J. H.} and M. Fearn and Ian Kyriakou and T. Ashley and Lambert, {Colin J.}",
year = "2007",
month = aug,
day = "6",
doi = "10.1088/0268-1242/22/9/009",
language = "English",
volume = "22",
pages = "1025--1032",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "9",

}

RIS

TY - JOUR

T1 - Numerical investigation of quantum wires in bevel-etched heterostructures.

AU - Giavaras, G.

AU - Jefferson, J. H.

AU - Fearn, M.

AU - Kyriakou, Ian

AU - Ashley, T.

AU - Lambert, Colin J.

PY - 2007/8/6

Y1 - 2007/8/6

N2 - We present and study a method to form quantum wires within a bevel-etched semiconductor heterostructure in which n-type quantum wires may be formed either next to a hole-charged region or a depleted quantum well region. By employing Schrödinger and Poisson solutions we examine the formation of the confining potential giving rise to a wire and its dependence on layer structure and magnitude of bevel angle. We also demonstrate how the basic idea can be extended to double well heterostructures in order to form additional quantum wires which can be induced in a lateral configuration. Possible advantages of the proposed method and the resulting quantum wires are discussed.

AB - We present and study a method to form quantum wires within a bevel-etched semiconductor heterostructure in which n-type quantum wires may be formed either next to a hole-charged region or a depleted quantum well region. By employing Schrödinger and Poisson solutions we examine the formation of the confining potential giving rise to a wire and its dependence on layer structure and magnitude of bevel angle. We also demonstrate how the basic idea can be extended to double well heterostructures in order to form additional quantum wires which can be induced in a lateral configuration. Possible advantages of the proposed method and the resulting quantum wires are discussed.

U2 - 10.1088/0268-1242/22/9/009

DO - 10.1088/0268-1242/22/9/009

M3 - Journal article

VL - 22

SP - 1025

EP - 1032

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

ER -