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Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

Research output: Contribution to journalJournal article

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  • D. Sercombe
  • S. Schwarz
  • O. Del Pozo-Zamudio
  • F. Liu
  • B. J. Robinson
  • E. A. Chekhovich
  • I. I. Tartakovskii
  • O. Kolosov
  • A. I. Tartakovskii
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Journal publication date12/12/2013
JournalScientific Reports
Volume3
Number of pages6
Original languageEnglish

Abstract

We use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the effects of dielectric substrate and capping on optical properties of a few mono-layer MoS2 films. PL lineshapes and peak energies for uncapped films are found to vary widely. This non-uniformity is dramatically suppressed by capping with SiO2 and SiN, improving mechanical coupling of MoS2 with the surrounding dielectrics. Capping also leads to pronounced charging of the films, evidenced from the dominating negative trion peak in PL.

Bibliographic note

This work is licensed under a Creative Commons Attribution 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/ 17 pages, 5 figures