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Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

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Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. / Sercombe, D.; Schwarz, S.; Del Pozo-Zamudio, O. et al.
In: Scientific Reports, Vol. 3, 03489, 12.12.2013.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Sercombe, D, Schwarz, S, Del Pozo-Zamudio, O, Liu, F, J. Robinson, B, A. Chekhovich, E, I. Tartakovskii, I, Kolosov, O & I. Tartakovskii, A 2013, 'Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates', Scientific Reports, vol. 3, 03489. https://doi.org/10.1038/srep03489

APA

Sercombe, D., Schwarz, S., Del Pozo-Zamudio, O., Liu, F., J. Robinson, B., A. Chekhovich, E., I. Tartakovskii, I., Kolosov, O., & I. Tartakovskii, A. (2013). Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. Scientific Reports, 3, Article 03489. https://doi.org/10.1038/srep03489

Vancouver

Sercombe D, Schwarz S, Del Pozo-Zamudio O, Liu F, J. Robinson B, A. Chekhovich E et al. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. Scientific Reports. 2013 Dec 12;3:03489. doi: 10.1038/srep03489

Author

Sercombe, D. ; Schwarz, S. ; Del Pozo-Zamudio, O. et al. / Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. In: Scientific Reports. 2013 ; Vol. 3.

Bibtex

@article{2c84a8f5bbc64f22a7dcc14d478613f2,
title = "Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates",
abstract = "We use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the effects of dielectric substrate and capping on optical properties of a few mono-layer MoS2 films. PL lineshapes and peak energies for uncapped films are found to vary widely. This non-uniformity is dramatically suppressed by capping with SiO2 and SiN, improving mechanical coupling of MoS2 with the surrounding dielectrics. Capping also leads to pronounced charging of the films, evidenced from the dominating negative trion peak in PL.",
keywords = "cond-mat.mtrl-sci",
author = "D. Sercombe and S. Schwarz and {Del Pozo-Zamudio}, O. and F. Liu and {J. Robinson}, B. and {A. Chekhovich}, E. and {I. Tartakovskii}, I. and O. Kolosov and {I. Tartakovskii}, A.",
note = "This work is licensed under a Creative Commons Attribution 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/ 17 pages, 5 figures",
year = "2013",
month = dec,
day = "12",
doi = "10.1038/srep03489",
language = "English",
volume = "3",
journal = "Scientific Reports",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

AU - Sercombe, D.

AU - Schwarz, S.

AU - Del Pozo-Zamudio, O.

AU - Liu, F.

AU - J. Robinson, B.

AU - A. Chekhovich, E.

AU - I. Tartakovskii, I.

AU - Kolosov, O.

AU - I. Tartakovskii, A.

N1 - This work is licensed under a Creative Commons Attribution 3.0 Unported License. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/ 17 pages, 5 figures

PY - 2013/12/12

Y1 - 2013/12/12

N2 - We use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the effects of dielectric substrate and capping on optical properties of a few mono-layer MoS2 films. PL lineshapes and peak energies for uncapped films are found to vary widely. This non-uniformity is dramatically suppressed by capping with SiO2 and SiN, improving mechanical coupling of MoS2 with the surrounding dielectrics. Capping also leads to pronounced charging of the films, evidenced from the dominating negative trion peak in PL.

AB - We use micro-photoluminescence (PL) and ultrasonic force microscopy to explore the effects of dielectric substrate and capping on optical properties of a few mono-layer MoS2 films. PL lineshapes and peak energies for uncapped films are found to vary widely. This non-uniformity is dramatically suppressed by capping with SiO2 and SiN, improving mechanical coupling of MoS2 with the surrounding dielectrics. Capping also leads to pronounced charging of the films, evidenced from the dominating negative trion peak in PL.

KW - cond-mat.mtrl-sci

U2 - 10.1038/srep03489

DO - 10.1038/srep03489

M3 - Journal article

VL - 3

JO - Scientific Reports

JF - Scientific Reports

M1 - 03489

ER -