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Home > Research > Publications & Outputs > Pentenary GaInAsPSb for mid-infrared light-emit...
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Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

Research output: Contribution in Book/Report/ProceedingsPaper

Published

Publication date2007
Host publicationQuantum Sensing and Nanophotonic Devices IV
EditorsM Razeghi, GJ Brown
Place of publicationBELLINGHAM
PublisherSPIE-INT SOC OPTICAL ENGINEERING
Pages47918-47918
Number of pages8
ISBN (Print)978-0-8194-6592-4
Original languageEnglish

Conference

ConferenceConference on Quantum Sensing and Nanophotonic Devices IV
CitySan Jose
Period22/01/0725/01/07

Conference

ConferenceConference on Quantum Sensing and Nanophotonic Devices IV
CitySan Jose
Period22/01/0725/01/07

Abstract

GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homejunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 mu m at room temperature was observed.