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Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

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Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. / Smirnov, V. M.; Batty, P. J.; Krier, A. et al.
Quantum Sensing and Nanophotonic Devices IV. ed. / M Razeghi; GJ Brown. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING, 2007. p. 47918-47918.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Smirnov, VM, Batty, PJ, Krier, A & Jones, R 2007, Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. in M Razeghi & GJ Brown (eds), Quantum Sensing and Nanophotonic Devices IV. SPIE-INT SOC OPTICAL ENGINEERING, BELLINGHAM, pp. 47918-47918, Conference on Quantum Sensing and Nanophotonic Devices IV, San Jose, 22/01/07. https://doi.org/10.1117/12.721327

APA

Smirnov, V. M., Batty, P. J., Krier, A., & Jones, R. (2007). Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. In M. Razeghi, & GJ. Brown (Eds.), Quantum Sensing and Nanophotonic Devices IV (pp. 47918-47918). SPIE-INT SOC OPTICAL ENGINEERING. https://doi.org/10.1117/12.721327

Vancouver

Smirnov VM, Batty PJ, Krier A, Jones R. Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. In Razeghi M, Brown GJ, editors, Quantum Sensing and Nanophotonic Devices IV. BELLINGHAM: SPIE-INT SOC OPTICAL ENGINEERING. 2007. p. 47918-47918 doi: 10.1117/12.721327

Author

Smirnov, V. M. ; Batty, P. J. ; Krier, A. et al. / Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918. Quantum Sensing and Nanophotonic Devices IV. editor / M Razeghi ; GJ Brown. BELLINGHAM : SPIE-INT SOC OPTICAL ENGINEERING, 2007. pp. 47918-47918

Bibtex

@inproceedings{6c85ec60054d4c158fbf81585f525e2e,
title = "Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918",
abstract = "GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homejunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 mu m at room temperature was observed.",
author = "Smirnov, {V. M.} and Batty, {P. J.} and A. Krier and Robert Jones",
year = "2007",
doi = "10.1117/12.721327",
language = "English",
isbn = "978-0-8194-6592-4",
pages = "47918--47918",
editor = "M Razeghi and GJ Brown",
booktitle = "Quantum Sensing and Nanophotonic Devices IV",
publisher = "SPIE-INT SOC OPTICAL ENGINEERING",
note = "Conference on Quantum Sensing and Nanophotonic Devices IV ; Conference date: 22-01-2007 Through 25-01-2007",

}

RIS

TY - GEN

T1 - Pentenary GaInAsPSb for mid-infrared light-emitting diodes and lasers grown by liquid phase epitaxy - art. no. 647918

AU - Smirnov, V. M.

AU - Batty, P. J.

AU - Krier, A.

AU - Jones, Robert

PY - 2007

Y1 - 2007

N2 - GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homejunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 mu m at room temperature was observed.

AB - GaInAsPSb is a new narrow gap semiconductor material, which is suitable for the fabrication of semiconductor light sources for the mid-infrared spectral range. Unique physical properties of the alloy are discussed and its advantages for mid-infrared optoelectronic devices are considered. Liquid phase epitaxy (LPE) growth conditions for GaInAsPSb homogeneous high crystal quality layers lattice-matched onto GaSb substrates were determined. Spectra of photoluminescence (PL) emission were investigated. Homejunction p-i-n light-emitting diodes (LEDs) based on this pentenary alloy were fabricated and electroluminescence (EL) peaking near 4.0 mu m at room temperature was observed.

U2 - 10.1117/12.721327

DO - 10.1117/12.721327

M3 - Conference contribution/Paper

SN - 978-0-8194-6592-4

SP - 47918

EP - 47918

BT - Quantum Sensing and Nanophotonic Devices IV

A2 - Razeghi, M

A2 - Brown, GJ

PB - SPIE-INT SOC OPTICAL ENGINEERING

CY - BELLINGHAM

T2 - Conference on Quantum Sensing and Nanophotonic Devices IV

Y2 - 22 January 2007 through 25 January 2007

ER -