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  • Chang AIP Advances 5 067141 (2015)

    Rights statement: Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in AIP Advances, 5 (6), 2015 and may be found at http://scitation.aip.org/content/aip/journal/adva/5/6/10.1063/1.4922950

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Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. / Chang, Yu-Chen; Robson, Alexander; Harrison, Samuel et al.
In: AIP Advances, Vol. 5, No. 6, 067141, 22.06.2015.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Chang, Y-C, Robson, A, Harrison, S, Zhuang, Q & Hayne, M 2015, 'Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots', AIP Advances, vol. 5, no. 6, 067141. https://doi.org/10.1063/1.4922950

APA

Chang, Y-C., Robson, A., Harrison, S., Zhuang, Q., & Hayne, M. (2015). Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. AIP Advances, 5(6), Article 067141. https://doi.org/10.1063/1.4922950

Vancouver

Chang Y-C, Robson A, Harrison S, Zhuang Q, Hayne M. Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. AIP Advances. 2015 Jun 22;5(6):067141. doi: 10.1063/1.4922950

Author

Chang, Yu-Chen ; Robson, Alexander ; Harrison, Samuel et al. / Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots. In: AIP Advances. 2015 ; Vol. 5, No. 6.

Bibtex

@article{d20f6adcb3264050bc8dadbb456802ec,
title = "Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots",
abstract = "We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1-xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.",
author = "Yu-Chen Chang and Alexander Robson and Samuel Harrison and Qiandong Zhuang and Manus Hayne",
note = "Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in AIP Advances, 5 (6), 2015 and may be found at http://scitation.aip.org/content/aip/journal/adva/5/6/10.1063/1.4922950 Date of acceptance is stated in attached document",
year = "2015",
month = jun,
day = "22",
doi = "10.1063/1.4922950",
language = "English",
volume = "5",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

RIS

TY - JOUR

T1 - Phonon bottleneck in GaAs/AlxGa1-xAs quantum dots

AU - Chang, Yu-Chen

AU - Robson, Alexander

AU - Harrison, Samuel

AU - Zhuang, Qiandong

AU - Hayne, Manus

N1 - Copyright 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in AIP Advances, 5 (6), 2015 and may be found at http://scitation.aip.org/content/aip/journal/adva/5/6/10.1063/1.4922950 Date of acceptance is stated in attached document

PY - 2015/6/22

Y1 - 2015/6/22

N2 - We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1-xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

AB - We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1-xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.

U2 - 10.1063/1.4922950

DO - 10.1063/1.4922950

M3 - Journal article

VL - 5

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 6

M1 - 067141

ER -