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Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

Research output: Contribution to journalJournal article

Published
<mark>Journal publication date</mark>09/2000
<mark>Journal</mark>Applied Physics A
Issue number3
Volume71
Number of pages5
Pages (from-to)249-253
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.