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Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

Research output: Contribution to journalJournal article

Published

Journal publication date09/2000
JournalApplied Physics A: Materials Science and Processing
Journal number3
Volume71
Number of pages5
Pages249-253
Original languageEnglish

Abstract

InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.