We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Photoluminescence from InAs quantum wells grown...
View graph of relations

« Back

Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy. .

Research output: Contribution to journalJournal article


Journal publication date09/2000
JournalApplied Physics A
Journal number3
Number of pages5
Original languageEnglish


InAs quantum wells have been grown using a novel rapid-slider liquid-phase epitaxial growth technique. Lattice-matched quantum wells down to 2.5 nm in thickness have been produced with InAs0.36Sb0.20P0.44 barriers. Bright photoluminescence was observed from 33-nm InAs quantum wells consistent with emission from a type-II InAsSbP/InAs system.