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Photoluminescence studies of individual and few GaSb/GaAs quantum rings

Research output: Contribution to journalJournal article

Published
Article number117127
<mark>Journal publication date</mark>1/11/2014
<mark>Journal</mark>AIP Advances
Issue number11
Volume4
Number of pages6
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 µeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift

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© © 2014 Author(s).. All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.