Home > Research > Publications & Outputs > Power dependence of the photocurrent lineshape ...

Research

Links

Text available via DOI:

Keywords

View graph of relations

Power dependence of the photocurrent lineshape in a semiconductor quantum dot

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Power dependence of the photocurrent lineshape in a semiconductor quantum dot. / Russell, A.; Falko, Vladimir.
In: Applied Physics Letters, Vol. 91, No. 19, 193107, 05.11.2007.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Russell, A & Falko, V 2007, 'Power dependence of the photocurrent lineshape in a semiconductor quantum dot', Applied Physics Letters, vol. 91, no. 19, 193107. https://doi.org/10.1063/1.2803850

APA

Russell, A., & Falko, V. (2007). Power dependence of the photocurrent lineshape in a semiconductor quantum dot. Applied Physics Letters, 91(19), Article 193107. https://doi.org/10.1063/1.2803850

Vancouver

Russell A, Falko V. Power dependence of the photocurrent lineshape in a semiconductor quantum dot. Applied Physics Letters. 2007 Nov 5;91(19):193107. doi: 10.1063/1.2803850

Author

Russell, A. ; Falko, Vladimir. / Power dependence of the photocurrent lineshape in a semiconductor quantum dot. In: Applied Physics Letters. 2007 ; Vol. 91, No. 19.

Bibtex

@article{ab6cf8c829e64370b826e277a66274fa,
title = "Power dependence of the photocurrent lineshape in a semiconductor quantum dot",
abstract = "We propose a kinetic theory to describe the power dependence of the photocurrent lineshape in optically pumped quantum dots at low temperatures in both zero and finite magnetic fields. We show that there is a crossover power P-c, determined by the electron and hole tunneling rates, where the photocurrent no longer reflects the exciton lifetime. For P > P-c, we show that the photocurrent saturates due to the slow hole escape rate, whereas the linewidth increases with power. We analyze the spin-doublet lineshape in high magnetic fields and determine to what measure it reflects the degree of circular polarization of incident light.",
keywords = "optical pumping, photoconductivity, photoemission, polarisation, semiconductor quantum dots, tunnelling",
author = "A. Russell and Vladimir Falko",
note = "Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 193107 (2007) and may be found at http://link.aip.org/link/?APPLAB/91/193107/1",
year = "2007",
month = nov,
day = "5",
doi = "10.1063/1.2803850",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "19",

}

RIS

TY - JOUR

T1 - Power dependence of the photocurrent lineshape in a semiconductor quantum dot

AU - Russell, A.

AU - Falko, Vladimir

N1 - Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 193107 (2007) and may be found at http://link.aip.org/link/?APPLAB/91/193107/1

PY - 2007/11/5

Y1 - 2007/11/5

N2 - We propose a kinetic theory to describe the power dependence of the photocurrent lineshape in optically pumped quantum dots at low temperatures in both zero and finite magnetic fields. We show that there is a crossover power P-c, determined by the electron and hole tunneling rates, where the photocurrent no longer reflects the exciton lifetime. For P > P-c, we show that the photocurrent saturates due to the slow hole escape rate, whereas the linewidth increases with power. We analyze the spin-doublet lineshape in high magnetic fields and determine to what measure it reflects the degree of circular polarization of incident light.

AB - We propose a kinetic theory to describe the power dependence of the photocurrent lineshape in optically pumped quantum dots at low temperatures in both zero and finite magnetic fields. We show that there is a crossover power P-c, determined by the electron and hole tunneling rates, where the photocurrent no longer reflects the exciton lifetime. For P > P-c, we show that the photocurrent saturates due to the slow hole escape rate, whereas the linewidth increases with power. We analyze the spin-doublet lineshape in high magnetic fields and determine to what measure it reflects the degree of circular polarization of incident light.

KW - optical pumping

KW - photoconductivity

KW - photoemission

KW - polarisation

KW - semiconductor quantum dots

KW - tunnelling

U2 - 10.1063/1.2803850

DO - 10.1063/1.2803850

M3 - Journal article

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 19

M1 - 193107

ER -