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Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice

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Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice. / Liu, B.; Zhuang, Qiandong; Yoon, S. F. et al.
In: International Journal of Modern Physics B, Vol. 15, No. 13, 2001, p. 1959-1968.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Liu, B, Zhuang, Q, Yoon, SF, Dai, JH, Kong, MY, Zeng, YP, Li, JM, Lin, LY & Zhang, JH 2001, 'Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice', International Journal of Modern Physics B, vol. 15, no. 13, pp. 1959-1968. https://doi.org/10.1142/S0217979201004800

APA

Liu, B., Zhuang, Q., Yoon, S. F., Dai, J. H., Kong, M. Y., Zeng, Y. P., Li, J. M., Lin, L. Y., & Zhang, J. H. (2001). Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice. International Journal of Modern Physics B, 15(13), 1959-1968. https://doi.org/10.1142/S0217979201004800

Vancouver

Liu B, Zhuang Q, Yoon SF, Dai JH, Kong MY, Zeng YP et al. Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice. International Journal of Modern Physics B. 2001;15(13):1959-1968. doi: 10.1142/S0217979201004800

Author

Liu, B. ; Zhuang, Qiandong ; Yoon, S. F. et al. / Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice. In: International Journal of Modern Physics B. 2001 ; Vol. 15, No. 13. pp. 1959-1968.

Bibtex

@article{07899fa0529b44b49cdc2a08eea6e512,
title = "Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice",
abstract = "We investigated properties of intraband absorption in InxGa1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.",
author = "B. Liu and Qiandong Zhuang and Yoon, {S. F.} and Dai, {J. H.} and M.Y. Kong and Zeng, {Y. P.} and Li, {J. M.} and Lin, {L. Y.} and Zhang, {J. H.}",
year = "2001",
doi = "10.1142/S0217979201004800",
language = "English",
volume = "15",
pages = "1959--1968",
journal = "International Journal of Modern Physics B",
issn = "0217-9792",
publisher = "World Scientific Publishing Co. Pte Ltd",
number = "13",

}

RIS

TY - JOUR

T1 - Properties and turning of intraband optical absorption in inxga1-xas/gaas self-assembled quantum dot superlattice

AU - Liu, B.

AU - Zhuang, Qiandong

AU - Yoon, S. F.

AU - Dai, J. H.

AU - Kong, M.Y.

AU - Zeng, Y. P.

AU - Li, J. M.

AU - Lin, L. Y.

AU - Zhang, J. H.

PY - 2001

Y1 - 2001

N2 - We investigated properties of intraband absorption in InxGa1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.

AB - We investigated properties of intraband absorption in InxGa1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.

U2 - 10.1142/S0217979201004800

DO - 10.1142/S0217979201004800

M3 - Journal article

VL - 15

SP - 1959

EP - 1968

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

SN - 0217-9792

IS - 13

ER -