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Pyramidal quantum dots: High uniformity and narrow excitonic emission

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<mark>Journal publication date</mark>01/2010
<mark>Journal</mark>Superlattices and Microstructures
Number of pages5
<mark>Original language</mark>English


We report on the optical properties of site-controlled InGaAs dots in GaAs barriers grown in pre-patterned, large pitch, pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 mu eV) when compared to the state-of-the-art for site controlled quantum dots. (C) 2009 Elsevier Ltd. All rights reserved.