Research output: Contribution to journal › Journal article
|<mark>Journal publication date</mark>||01/2010|
|<mark>Journal</mark>||Superlattices and Microstructures|
|Number of pages||5|
We report on the optical properties of site-controlled InGaAs dots in GaAs barriers grown in pre-patterned, large pitch, pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 mu eV) when compared to the state-of-the-art for site controlled quantum dots. (C) 2009 Elsevier Ltd. All rights reserved.