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QD2D: GaSb/GaAs nanostructures for charge-based memory

Research output: Contribution to conference - Without ISBN/ISSN › Poster

Published

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QD2D: GaSb/GaAs nanostructures for charge-based memory. / Young, Robert.
2011. Poster session presented at UK Semiconductors 2011 Conference, Sheffield, United Kingdom.

Research output: Contribution to conference - Without ISBN/ISSN › Poster

Harvard

Young, R 2011, 'QD2D: GaSb/GaAs nanostructures for charge-based memory', UK Semiconductors 2011 Conference, Sheffield, United Kingdom, 6/07/11.

APA

Young, R. (2011). QD2D: GaSb/GaAs nanostructures for charge-based memory. Poster session presented at UK Semiconductors 2011 Conference, Sheffield, United Kingdom.

Vancouver

Young R. QD2D: GaSb/GaAs nanostructures for charge-based memory. 2011. Poster session presented at UK Semiconductors 2011 Conference, Sheffield, United Kingdom.

Author

Young, Robert. / QD2D : GaSb/GaAs nanostructures for charge-based memory. Poster session presented at UK Semiconductors 2011 Conference, Sheffield, United Kingdom.

Bibtex

@conference{c5b96d27a7b041fb9da8481ff22d4c5f,
title = "QD2D: GaSb/GaAs nanostructures for charge-based memory",
author = "Robert Young",
year = "2011",
month = jul,
day = "6",
language = "English",
note = "UK Semiconductors 2011 Conference ; Conference date: 06-07-2011",

}

RIS

TY - CONF

T1 - QD2D

T2 - UK Semiconductors 2011 Conference

AU - Young, Robert

PY - 2011/7/6

Y1 - 2011/7/6

M3 - Poster

Y2 - 6 July 2011

ER -