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Quantum interference mediated vertical molecular tunneling transistors

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Quantum interference mediated vertical molecular tunneling transistors. / Jia, C.; Famili, Marjan; Carlotti, M.; Liu, Y.; Wang, P.; Grace, I.M.; Feng, Z.; Wang, Y.; Zhao, Z.; Ding, M.; Xu, X.; Wang, C.; Lee, S.-J.; Huang, Y.; Chiechi, R.C.; Lambert, C.J.; Duan, X.

In: Science Advances, Vol. 4, No. 10, eaat8237, 12.10.2018.

Research output: Contribution to journalJournal article

Harvard

Jia, C, Famili, M, Carlotti, M, Liu, Y, Wang, P, Grace, IM, Feng, Z, Wang, Y, Zhao, Z, Ding, M, Xu, X, Wang, C, Lee, S-J, Huang, Y, Chiechi, RC, Lambert, CJ & Duan, X 2018, 'Quantum interference mediated vertical molecular tunneling transistors', Science Advances, vol. 4, no. 10, eaat8237. https://doi.org/10.1126/sciadv.aat8237

APA

Jia, C., Famili, M., Carlotti, M., Liu, Y., Wang, P., Grace, I. M., Feng, Z., Wang, Y., Zhao, Z., Ding, M., Xu, X., Wang, C., Lee, S-J., Huang, Y., Chiechi, R. C., Lambert, C. J., & Duan, X. (2018). Quantum interference mediated vertical molecular tunneling transistors. Science Advances, 4(10), [eaat8237]. https://doi.org/10.1126/sciadv.aat8237

Vancouver

Jia C, Famili M, Carlotti M, Liu Y, Wang P, Grace IM et al. Quantum interference mediated vertical molecular tunneling transistors. Science Advances. 2018 Oct 12;4(10). eaat8237. https://doi.org/10.1126/sciadv.aat8237

Author

Jia, C. ; Famili, Marjan ; Carlotti, M. ; Liu, Y. ; Wang, P. ; Grace, I.M. ; Feng, Z. ; Wang, Y. ; Zhao, Z. ; Ding, M. ; Xu, X. ; Wang, C. ; Lee, S.-J. ; Huang, Y. ; Chiechi, R.C. ; Lambert, C.J. ; Duan, X. / Quantum interference mediated vertical molecular tunneling transistors. In: Science Advances. 2018 ; Vol. 4, No. 10.

Bibtex

@article{67c91adc903a4975891b50602130c0a0,
title = "Quantum interference mediated vertical molecular tunneling transistors",
abstract = "Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated circuits. However, due to their complex fabrication processes and poor stability, traditional molecular transistors can only operate stably at cryogenic temperatures. Here, through a combined experimental and theoretical investigation, we demonstrate a new design of vertical molecular tunneling transistors, with stable switching operations up to room temperature, formed from cross-plane graphene/self-assembled monolayer (SAM)/gold heterostructures. We show that vertical molecular junctions formed from pseudo-p-bis((4-(acetylthio)phenyl)ethynyl)-p-[2,2]cyclophane (PCP) SAMs exhibit destructive quantum interference (QI) effects, which are absent in 1,4-bis(((4-acetylthio)phenyl)ethynyl)benzene (OPE3) SAMs. Consequently, the zero-bias differential conductance of the former is only about 2% of the latter, resulting in an enhanced on-off current ratio for (PCP) SAMs. Field-effect control is achieved using an ionic liquid gate,whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting on-off current ratio achieved in PCP SAMs can reach up to ∼330, about one order of magnitude higher than that of OPE3 SAMs. The demonstration of molecular junctions with combined QI effect and gate tunability represents a critical step toward functional devices in future molecular-scale electronics. {\textcopyright} 2018 The Authors, some rights reserved.",
keywords = "Electric field effects, Ionic liquids, Quantum interference devices, Cryogenic temperatures, Differential conductances, Electronic building blocks, Field effect controls, Molecular transistors, Molecular-scale electronics, Theoretical investigations, Vertical electric fields, Transistors",
author = "C. Jia and Marjan Famili and M. Carlotti and Y. Liu and P. Wang and I.M. Grace and Z. Feng and Y. Wang and Z. Zhao and M. Ding and X. Xu and C. Wang and S.-J. Lee and Y. Huang and R.C. Chiechi and C.J. Lambert and X. Duan",
year = "2018",
month = oct
day = "12",
doi = "10.1126/sciadv.aat8237",
language = "English",
volume = "4",
journal = "Science Advances",
issn = "2375-2548",
publisher = "American Association for the Advancement of Science",
number = "10",

}

RIS

TY - JOUR

T1 - Quantum interference mediated vertical molecular tunneling transistors

AU - Jia, C.

AU - Famili, Marjan

AU - Carlotti, M.

AU - Liu, Y.

AU - Wang, P.

AU - Grace, I.M.

AU - Feng, Z.

AU - Wang, Y.

AU - Zhao, Z.

AU - Ding, M.

AU - Xu, X.

AU - Wang, C.

AU - Lee, S.-J.

AU - Huang, Y.

AU - Chiechi, R.C.

AU - Lambert, C.J.

AU - Duan, X.

PY - 2018/10/12

Y1 - 2018/10/12

N2 - Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated circuits. However, due to their complex fabrication processes and poor stability, traditional molecular transistors can only operate stably at cryogenic temperatures. Here, through a combined experimental and theoretical investigation, we demonstrate a new design of vertical molecular tunneling transistors, with stable switching operations up to room temperature, formed from cross-plane graphene/self-assembled monolayer (SAM)/gold heterostructures. We show that vertical molecular junctions formed from pseudo-p-bis((4-(acetylthio)phenyl)ethynyl)-p-[2,2]cyclophane (PCP) SAMs exhibit destructive quantum interference (QI) effects, which are absent in 1,4-bis(((4-acetylthio)phenyl)ethynyl)benzene (OPE3) SAMs. Consequently, the zero-bias differential conductance of the former is only about 2% of the latter, resulting in an enhanced on-off current ratio for (PCP) SAMs. Field-effect control is achieved using an ionic liquid gate,whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting on-off current ratio achieved in PCP SAMs can reach up to ∼330, about one order of magnitude higher than that of OPE3 SAMs. The demonstration of molecular junctions with combined QI effect and gate tunability represents a critical step toward functional devices in future molecular-scale electronics. © 2018 The Authors, some rights reserved.

AB - Molecular transistors operating in the quantum tunneling regime represent potential electronic building blocks for future integrated circuits. However, due to their complex fabrication processes and poor stability, traditional molecular transistors can only operate stably at cryogenic temperatures. Here, through a combined experimental and theoretical investigation, we demonstrate a new design of vertical molecular tunneling transistors, with stable switching operations up to room temperature, formed from cross-plane graphene/self-assembled monolayer (SAM)/gold heterostructures. We show that vertical molecular junctions formed from pseudo-p-bis((4-(acetylthio)phenyl)ethynyl)-p-[2,2]cyclophane (PCP) SAMs exhibit destructive quantum interference (QI) effects, which are absent in 1,4-bis(((4-acetylthio)phenyl)ethynyl)benzene (OPE3) SAMs. Consequently, the zero-bias differential conductance of the former is only about 2% of the latter, resulting in an enhanced on-off current ratio for (PCP) SAMs. Field-effect control is achieved using an ionic liquid gate,whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting on-off current ratio achieved in PCP SAMs can reach up to ∼330, about one order of magnitude higher than that of OPE3 SAMs. The demonstration of molecular junctions with combined QI effect and gate tunability represents a critical step toward functional devices in future molecular-scale electronics. © 2018 The Authors, some rights reserved.

KW - Electric field effects

KW - Ionic liquids

KW - Quantum interference devices

KW - Cryogenic temperatures

KW - Differential conductances

KW - Electronic building blocks

KW - Field effect controls

KW - Molecular transistors

KW - Molecular-scale electronics

KW - Theoretical investigations

KW - Vertical electric fields

KW - Transistors

U2 - 10.1126/sciadv.aat8237

DO - 10.1126/sciadv.aat8237

M3 - Journal article

VL - 4

JO - Science Advances

JF - Science Advances

SN - 2375-2548

IS - 10

M1 - eaat8237

ER -