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Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

Research output: Contribution to journalJournal article

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Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. / Cheetham, K. J.; Krier, A.; Patel, I. I.; Martin, F. L.; Tzeng, J-S; Wu, C-J; Lin, H-H; EPSRC Studentship for KJC (Funder).

In: Journal of Physics D: Applied Physics, Vol. 44, No. 8, 02.03.2011, p. 085405.

Research output: Contribution to journalJournal article

Harvard

Cheetham, KJ, Krier, A, Patel, II, Martin, FL, Tzeng, J-S, Wu, C-J, Lin, H-H & EPSRC Studentship for KJC (Funder) 2011, 'Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.', Journal of Physics D: Applied Physics, vol. 44, no. 8, pp. 085405. https://doi.org/10.1088/0022-3727/44/8/085405

APA

Cheetham, K. J., Krier, A., Patel, I. I., Martin, F. L., Tzeng, J-S., Wu, C-J., Lin, H-H., & EPSRC Studentship for KJC (Funder) (2011). Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. Journal of Physics D: Applied Physics, 44(8), 085405. https://doi.org/10.1088/0022-3727/44/8/085405

Vancouver

Cheetham KJ, Krier A, Patel II, Martin FL, Tzeng J-S, Wu C-J et al. Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. Journal of Physics D: Applied Physics. 2011 Mar 2;44(8):085405. https://doi.org/10.1088/0022-3727/44/8/085405

Author

Cheetham, K. J. ; Krier, A. ; Patel, I. I. ; Martin, F. L. ; Tzeng, J-S ; Wu, C-J ; Lin, H-H ; EPSRC Studentship for KJC (Funder). / Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE. In: Journal of Physics D: Applied Physics. 2011 ; Vol. 44, No. 8. pp. 085405.

Bibtex

@article{6862d0bb820b45d5a549a2af39642676,
title = "Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.",
abstract = "The Raman spectra of quaternary InAsxSbyP1-x-y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.",
author = "Cheetham, {K. J.} and A. Krier and Patel, {I. I.} and Martin, {F. L.} and J-S Tzeng and C-J Wu and H-H Lin and {EPSRC Studentship for KJC (Funder)}",
year = "2011",
month = mar
day = "2",
doi = "10.1088/0022-3727/44/8/085405",
language = "English",
volume = "44",
pages = "085405",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "8",

}

RIS

TY - JOUR

T1 - Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE.

AU - Cheetham, K. J.

AU - Krier, A.

AU - Patel, I. I.

AU - Martin, F. L.

AU - Tzeng, J-S

AU - Wu, C-J

AU - Lin, H-H

AU - EPSRC Studentship for KJC (Funder)

PY - 2011/3/2

Y1 - 2011/3/2

N2 - The Raman spectra of quaternary InAsxSbyP1-x-y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.

AB - The Raman spectra of quaternary InAsxSbyP1-x-y epitaxial layers nominally lattice-matched to (1 0 0) n-type InAs substrates are reported. The phonon peaks are identified for alloys covering a wide composition range extending into the miscibility gap. Three-mode behaviour was obtained across part of the composition range. InP-like longitudinal optical (LO) and transverse optical (TO) phonons were observed over the entire compositional range, but InAs-like LO phonons were only observed at high arsenic concentrations and no InSb-like TO phonons were observed. Disorder-related phonon peaks were obtained for alloy compositions within the miscibility gap.

U2 - 10.1088/0022-3727/44/8/085405

DO - 10.1088/0022-3727/44/8/085405

M3 - Journal article

VL - 44

SP - 085405

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 8

ER -