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Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions

Research output: Contribution to journalJournal article

Published

  • M Hayne
  • Alan Usher
  • Jeffrey J Harris
  • Victor V Moshchalkov
  • C Thomas Foxon
Journal publication date15/06/1998
JournalPhysical Review B
Journal number23
Volume57
Number of pages5
Pages14813-14817
Original languageEnglish

Abstract

We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.

Bibliographic note

© 1998 The American Physical Society