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Remote impurity scattering in modulation-doped GaAs/AlxGa1-xAs heterojunctions

Research output: Contribution to journalJournal article


  • M Hayne
  • Alan Usher
  • Jeffrey J Harris
  • Victor V Moshchalkov
  • C Thomas Foxon
<mark>Journal publication date</mark>15/06/1998
<mark>Journal</mark>Physical Review B
Number of pages5
<mark>Original language</mark>English


We have investigated the time-dependent mobility and density of a modulation-doped GaAs/AlxGa1-xAs heterojunction subsequent to the lionization of DX centers using the persistent photoconductivity effect. Our results are in excellent agreement with a simple theory of mobility Limited by independent charged scattering centers. We show that these scattering centers are fluctuations in the average impurity potential which principally arise due to the presence of both positively and negatively charged impurities, and that the effect of correlation among charged impurities can be treated in terms of the removal of individual potential fluctuations.

Bibliographic note

© 1998 The American Physical Society