Research output: Contribution to Journal/Magazine › Journal article › peer-review
| Article number | 242101 |
|---|---|
| <mark>Journal publication date</mark> | 12/12/2011 |
| <mark>Journal</mark> | Applied Physics Letters |
| Issue number | 24 |
| Volume | 99 |
| Number of pages | 3 |
| Pages (from-to) | - |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6)A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.