Home > Research > Publications & Outputs > Room temperature ballistic transport in InSb qu...
View graph of relations

Room temperature ballistic transport in InSb quantum well nanodevices

Research output: Contribution to journalJournal article


  • A. M. Gilbertson
  • A. Kormanyos
  • P. D. Buckle
  • M. Fearn
  • T. Ashley
  • Colin Lambert
  • S. A. Solin
  • L. F. Cohen
Article number242101
<mark>Journal publication date</mark>12/12/2011
<mark>Journal</mark>Applied Physics Letters
Issue number24
Number of pages3
Pages (from-to)-
<mark>Original language</mark>English


We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6)A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.