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Room temperature ballistic transport in InSb quantum well nanodevices

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Article number242101
<mark>Journal publication date</mark>12/12/2011
<mark>Journal</mark>Applied Physics Letters
Issue number24
Volume99
Number of pages3
Pages (from-to)-
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6)A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.