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Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . / Moiseev, K. D.; Krier, A.; Yakovlev, Y. P.
In: Journal of Electronic Materials, Vol. 33, No. 8, 08.2004, p. 867-872.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Moiseev, KD, Krier, A & Yakovlev, YP 2004, 'Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .', Journal of Electronic Materials, vol. 33, no. 8, pp. 867-872. https://doi.org/10.1007/s11664-004-0213-8

APA

Moiseev, K. D., Krier, A., & Yakovlev, Y. P. (2004). Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . Journal of Electronic Materials, 33(8), 867-872. https://doi.org/10.1007/s11664-004-0213-8

Vancouver

Moiseev KD, Krier A, Yakovlev YP. Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . Journal of Electronic Materials. 2004 Aug;33(8):867-872. doi: 10.1007/s11664-004-0213-8

Author

Moiseev, K. D. ; Krier, A. ; Yakovlev, Y. P. / Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. . In: Journal of Electronic Materials. 2004 ; Vol. 33, No. 8. pp. 867-872.

Bibtex

@article{ce7e118301f34783b499712178812f22,
title = "Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .",
abstract = "Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.",
keywords = "GaInAsSb - InAs substrates - liquid phase epitaxy (LPE) - photoluminescence (PL)",
author = "Moiseev, {K. D.} and A. Krier and Yakovlev, {Y. P.}",
year = "2004",
month = aug,
doi = "10.1007/s11664-004-0213-8",
language = "English",
volume = "33",
pages = "867--872",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "8",

}

RIS

TY - JOUR

T1 - Room-temperature photoluminescence of Ga0.96In0.04As0.11Sb0-89 lattice matched to InAs. .

AU - Moiseev, K. D.

AU - Krier, A.

AU - Yakovlev, Y. P.

PY - 2004/8

Y1 - 2004/8

N2 - Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.

AB - Photoluminescence (PL) has been observed at room temperature from a Ga0.96In0.04As0.11Sb0.89 quaternary solid solution for the first time. High-quality epitaxial layers of n-type (Te-doped) Ga0.96In0.04As0.11Sb0.89 with low In content were grown by liquid phase epitaxy (LPE) lattice-matched to InAs(100) substrates from a Ga-rich melt. The PL properties of the material were investigated over a wide temperature range, and the principal radiative transitions were identified. In the temperature range <150 K, donor-acceptor recombination involving the first and second ionization state of native antisite defects was the dominant radiative-recombination process, whereas interband recombination was found to dominate at room temperature.

KW - GaInAsSb - InAs substrates - liquid phase epitaxy (LPE) - photoluminescence (PL)

U2 - 10.1007/s11664-004-0213-8

DO - 10.1007/s11664-004-0213-8

M3 - Journal article

VL - 33

SP - 867

EP - 872

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 8

ER -