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Self-catalysed InAs1− xSbx nanowires grown directly on bare Si substrates

Research output: Contribution to journalJournal article

Published
<mark>Journal publication date</mark>12/2014
<mark>Journal</mark>Materials Research Bulletin
Volume60
Number of pages4
Pages (from-to)572–575
Publication statusPublished
Early online date16/09/14
Original languageEnglish

Abstract

We report the self-catalysed growth of InAs1 − xSbx nanowires directly on bare Si substrates. Vertically aligned and non-tapered InAs1−xSbx nanowires were realized via indium-assisted nucleation without using nanowire stems. The compositions of the InAs1 − xSbx nanowires were determined by high resolution X-ray diffraction (HRXRD). It is observed that the geometry of the nanowires is modified by the Sb flux resulting in an almost doubling of the lateral dimension and a corresponding suppression in the axial growth of the InAs1 − xSbx nanowires. This observation unravels a method to modify the geometry of InAs nanowire and open up a promising route for the direct integration of InAs1 − xSbx nanowires with the well-established Si platform.