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Silicon depletion layer actuators

Research output: Contribution to journalJournal article

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  • J. H. T. Ransley
  • A. Aziz
  • C. Durkan
  • A. A. Seshia
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Article number184103
<mark>Journal publication date</mark>5/05/2008
<mark>Journal</mark>Applied Physics Letters
Issue number18
Volume92
Number of pages3
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

The uncompensated donor or acceptor atoms present within the depletion layer of a diode can be employed in an electrostatic actuator, which utilizes the force between opposing. charges on either side of the semiconductor junction. We describe the theory of this actuator and demonstrate its application for the case of a diode on the top surface of a silicon cantilever. The Schottky diodes fabricated on the top surface of cantilevers were used to drive them into resonance. As the actuator driving voltages are varied, the amplitude of vibration of the cantilevers changes, which is in agreement with the theoretical predictions. (C) 2008 American Institute of Physics.