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Silicon sensitisation using light harvesting layers

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<mark>Journal publication date</mark>7/11/2014
<mark>Journal</mark>Materials Research Innovations
Issue number7
Volume18
Number of pages6
Pages (from-to)494-499
Publication statusPublished
Original languageEnglish

Abstract

Langmuir–Blodgett monolayers of a cyanine dye mixed with stearic acid were deposited on glass and silicon substrates with spacer layers of pure stearic acid monolayers or silicon dioxide films deposited by PECVD. By using the time correlated single photon counting technique, time resolved emission spectra (TRES) and decay curves were measured to characterise the dependence of energy transfer rate on the separation between the dye monolayer and the silicon surface and also on the dye concentrations in the monolayers. We observe interlayer energy transfer between monomers, dimers and higher aggregates present in the monolayer deposited on glass but also competing directly with energy transfer to silicon at close distances. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when present close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for distances close to the silicon surface.