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Silicon sensitisation using light harvesting layers

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Silicon sensitisation using light harvesting layers. / Fang, Liping; Alderman, Nicholas; Danos, Lefteris et al.
In: Materials Research Innovations, Vol. 18, No. 7, 07.11.2014, p. 494-499.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Fang, L, Alderman, N, Danos, L & Markvart, T 2014, 'Silicon sensitisation using light harvesting layers', Materials Research Innovations, vol. 18, no. 7, pp. 494-499. https://doi.org/10.1179/1433075X14Y.0000000257

APA

Fang, L., Alderman, N., Danos, L., & Markvart, T. (2014). Silicon sensitisation using light harvesting layers. Materials Research Innovations, 18(7), 494-499. https://doi.org/10.1179/1433075X14Y.0000000257

Vancouver

Fang L, Alderman N, Danos L, Markvart T. Silicon sensitisation using light harvesting layers. Materials Research Innovations. 2014 Nov 7;18(7):494-499. doi: 10.1179/1433075X14Y.0000000257

Author

Fang, Liping ; Alderman, Nicholas ; Danos, Lefteris et al. / Silicon sensitisation using light harvesting layers. In: Materials Research Innovations. 2014 ; Vol. 18, No. 7. pp. 494-499.

Bibtex

@article{ad7efedceb72421bbcdf6d0412d1ee05,
title = "Silicon sensitisation using light harvesting layers",
abstract = "Langmuir–Blodgett monolayers of a cyanine dye mixed with stearic acid were deposited on glass and silicon substrates with spacer layers of pure stearic acid monolayers or silicon dioxide films deposited by PECVD. By using the time correlated single photon counting technique, time resolved emission spectra (TRES) and decay curves were measured to characterise the dependence of energy transfer rate on the separation between the dye monolayer and the silicon surface and also on the dye concentrations in the monolayers. We observe interlayer energy transfer between monomers, dimers and higher aggregates present in the monolayer deposited on glass but also competing directly with energy transfer to silicon at close distances. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when present close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for distances close to the silicon surface.",
keywords = "Solar cells, Photovoltaics, Fluorescence, Excitation, Silicon, Light harvesting",
author = "Liping Fang and Nicholas Alderman and Lefteris Danos and Tomas Markvart",
year = "2014",
month = nov,
day = "7",
doi = "10.1179/1433075X14Y.0000000257",
language = "English",
volume = "18",
pages = "494--499",
journal = "Materials Research Innovations",
issn = "1432-8917",
publisher = "Maney Publishing",
number = "7",

}

RIS

TY - JOUR

T1 - Silicon sensitisation using light harvesting layers

AU - Fang, Liping

AU - Alderman, Nicholas

AU - Danos, Lefteris

AU - Markvart, Tomas

PY - 2014/11/7

Y1 - 2014/11/7

N2 - Langmuir–Blodgett monolayers of a cyanine dye mixed with stearic acid were deposited on glass and silicon substrates with spacer layers of pure stearic acid monolayers or silicon dioxide films deposited by PECVD. By using the time correlated single photon counting technique, time resolved emission spectra (TRES) and decay curves were measured to characterise the dependence of energy transfer rate on the separation between the dye monolayer and the silicon surface and also on the dye concentrations in the monolayers. We observe interlayer energy transfer between monomers, dimers and higher aggregates present in the monolayer deposited on glass but also competing directly with energy transfer to silicon at close distances. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when present close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for distances close to the silicon surface.

AB - Langmuir–Blodgett monolayers of a cyanine dye mixed with stearic acid were deposited on glass and silicon substrates with spacer layers of pure stearic acid monolayers or silicon dioxide films deposited by PECVD. By using the time correlated single photon counting technique, time resolved emission spectra (TRES) and decay curves were measured to characterise the dependence of energy transfer rate on the separation between the dye monolayer and the silicon surface and also on the dye concentrations in the monolayers. We observe interlayer energy transfer between monomers, dimers and higher aggregates present in the monolayer deposited on glass but also competing directly with energy transfer to silicon at close distances. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when present close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for distances close to the silicon surface.

KW - Solar cells

KW - Photovoltaics

KW - Fluorescence

KW - Excitation

KW - Silicon

KW - Light harvesting

U2 - 10.1179/1433075X14Y.0000000257

DO - 10.1179/1433075X14Y.0000000257

M3 - Journal article

VL - 18

SP - 494

EP - 499

JO - Materials Research Innovations

JF - Materials Research Innovations

SN - 1432-8917

IS - 7

ER -