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Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes

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Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes. / Bin Esro, Mazran; Georgakopoulos, Stamatis; Lu, Haizhou et al.
In: Journal of Materials Chemistry C, Vol. 4, No. 16, 28.04.2016, p. 3563-3570.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Bin Esro, M, Georgakopoulos, S, Lu, H, Vourlias, G, Krier, A, Milne, WI, Gillin, WP & Adamopoulos, G 2016, 'Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes', Journal of Materials Chemistry C, vol. 4, no. 16, pp. 3563-3570. https://doi.org/10.1039/C5TC04117A

APA

Bin Esro, M., Georgakopoulos, S., Lu, H., Vourlias, G., Krier, A., Milne, W. I., Gillin, W. P., & Adamopoulos, G. (2016). Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes. Journal of Materials Chemistry C, 4(16), 3563-3570. https://doi.org/10.1039/C5TC04117A

Vancouver

Bin Esro M, Georgakopoulos S, Lu H, Vourlias G, Krier A, Milne WI et al. Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes. Journal of Materials Chemistry C. 2016 Apr 28;4(16):3563-3570. Epub 2016 Mar 16. doi: 10.1039/C5TC04117A

Author

Bin Esro, Mazran ; Georgakopoulos, Stamatis ; Lu, Haizhou et al. / Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes. In: Journal of Materials Chemistry C. 2016 ; Vol. 4, No. 16. pp. 3563-3570.

Bibtex

@article{67c7797848f54d0aa3f598d592c99c9d,
title = "Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes",
abstract = "Here we present the deposition of antimony-doped tin oxide thin films using the ambient spray pyrolysis technique and demonstrate their implementation as transparent electrodes (anodes) in red, green and blue Organic Light emitting diodes. The films were spray coated at 380 oC from SnCl4 and SbCl3 solution blends in methanol and ∼230 nm thick films were investigated by means of x-ray diffraction, AFM, UV-Vis absorption spectroscopy, 4-point probe, Hall Effect and Kelvin Probe. It was found that for optimum antimony doping in the precursor solution of ∼2 wt%, the as-deposited ATO films exhibit excellent characteristics such as low surface roughness of RRMS∼6.3 nm, high work function (∼ -5.03 eV), wide direct band gap (∼4.2 eV), high transparency in the visible spectrum in excess of 85 % on glass, low sheet resistivity (∼32 Ohms/sq), high charge carrier concentration (∼6.35 × 10^20 cm-3) and carrier mobility of ∼32 cm2 V-1 s-1. Furthermore, the electrical and optical performance i.e. the turn on voltage and external quantum efficiency of red, green and blue OLEDs fabricated on optimized SnO2:Sb films were identical to those of OLEDs fabricated on commercially available ITO (Rs∼15 Ohms/sq) and were found to be in excess of 11 %, 0.3 % and 13 % for red, green and blue OLEDs respectively",
author = "{Bin Esro}, Mazran and Stamatis Georgakopoulos and Haizhou Lu and G. Vourlias and Anthony Krier and W.I Milne and W.P. Gillin and George Adamopoulos",
year = "2016",
month = apr,
day = "28",
doi = "10.1039/C5TC04117A",
language = "English",
volume = "4",
pages = "3563--3570",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "16",

}

RIS

TY - JOUR

T1 - Solution processed SnO2:Sb transparent conductive oxide as alternative to Indium Tin Oxide for applications in Organic Light Emitting Diodes

AU - Bin Esro, Mazran

AU - Georgakopoulos, Stamatis

AU - Lu, Haizhou

AU - Vourlias, G.

AU - Krier, Anthony

AU - Milne, W.I

AU - Gillin, W.P.

AU - Adamopoulos, George

PY - 2016/4/28

Y1 - 2016/4/28

N2 - Here we present the deposition of antimony-doped tin oxide thin films using the ambient spray pyrolysis technique and demonstrate their implementation as transparent electrodes (anodes) in red, green and blue Organic Light emitting diodes. The films were spray coated at 380 oC from SnCl4 and SbCl3 solution blends in methanol and ∼230 nm thick films were investigated by means of x-ray diffraction, AFM, UV-Vis absorption spectroscopy, 4-point probe, Hall Effect and Kelvin Probe. It was found that for optimum antimony doping in the precursor solution of ∼2 wt%, the as-deposited ATO films exhibit excellent characteristics such as low surface roughness of RRMS∼6.3 nm, high work function (∼ -5.03 eV), wide direct band gap (∼4.2 eV), high transparency in the visible spectrum in excess of 85 % on glass, low sheet resistivity (∼32 Ohms/sq), high charge carrier concentration (∼6.35 × 10^20 cm-3) and carrier mobility of ∼32 cm2 V-1 s-1. Furthermore, the electrical and optical performance i.e. the turn on voltage and external quantum efficiency of red, green and blue OLEDs fabricated on optimized SnO2:Sb films were identical to those of OLEDs fabricated on commercially available ITO (Rs∼15 Ohms/sq) and were found to be in excess of 11 %, 0.3 % and 13 % for red, green and blue OLEDs respectively

AB - Here we present the deposition of antimony-doped tin oxide thin films using the ambient spray pyrolysis technique and demonstrate their implementation as transparent electrodes (anodes) in red, green and blue Organic Light emitting diodes. The films were spray coated at 380 oC from SnCl4 and SbCl3 solution blends in methanol and ∼230 nm thick films were investigated by means of x-ray diffraction, AFM, UV-Vis absorption spectroscopy, 4-point probe, Hall Effect and Kelvin Probe. It was found that for optimum antimony doping in the precursor solution of ∼2 wt%, the as-deposited ATO films exhibit excellent characteristics such as low surface roughness of RRMS∼6.3 nm, high work function (∼ -5.03 eV), wide direct band gap (∼4.2 eV), high transparency in the visible spectrum in excess of 85 % on glass, low sheet resistivity (∼32 Ohms/sq), high charge carrier concentration (∼6.35 × 10^20 cm-3) and carrier mobility of ∼32 cm2 V-1 s-1. Furthermore, the electrical and optical performance i.e. the turn on voltage and external quantum efficiency of red, green and blue OLEDs fabricated on optimized SnO2:Sb films were identical to those of OLEDs fabricated on commercially available ITO (Rs∼15 Ohms/sq) and were found to be in excess of 11 %, 0.3 % and 13 % for red, green and blue OLEDs respectively

U2 - 10.1039/C5TC04117A

DO - 10.1039/C5TC04117A

M3 - Journal article

VL - 4

SP - 3563

EP - 3570

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 16

ER -