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Strain enhancement during annealing of GaAsN alloys.

Research output: Contribution to journalJournal article

Published

Associated organisational unit

Journal publication date15/05/2007
JournalJournal of Applied Physics
Journal number10
Volume101
Pages103536
Original languageEnglish

Abstract

We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.

Bibliographic note

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 101 (10), 2007 and may be found at http://link.aip.org/link/?JAPIAU/101/103536/1