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Structural and functional analysis of nanopillar spin electronic devices fabricated by 3D focused ion beam lithography

Research output: Contribution to journalJournal article


  • M. C. Wu
  • A. Aziz
  • J. D. S. Witt
  • M. C. Hickey
  • M. Ali
  • C. H. Marrows
  • B. J. Hickey
  • M. G. Blamire
Article number485305
<mark>Journal publication date</mark>3/12/2008
Issue number48
Number of pages5
<mark>Original language</mark>English


We discuss the fabrication of nanopillar spin electronic devices from metal multilayered heterostructures, utilizing a novel three-dimensional focused ion beam lithography process. Finite element simulation was performed to optimize the geometry of the nanopillar device and to demonstrate that current flow is perpendicular to the plane within the active region of the device. Clear zero-field current induced magnetization switching is observed in our nanopillar devices at room temperature.