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Structural modifications of InAs based materials for mid-infrared optoelectronic devices

Research output: Contribution in Book/Report/ProceedingsPaper

Published
Publication date2004
Host publicationASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems
EditorsJ Osvald, S Hascik
Place of PublicationNew York
PublisherIEEE
Pages203-206
Number of pages4
ISBN (Print)0-7803-8535-7
<mark>Original language</mark>English
Event5th International Conference on Advanced Semiconductor Devices and Microsystems - Smolenice

Conference

Conference5th International Conference on Advanced Semiconductor Devices and Microsystems
CitySmolenice
Period17/10/0421/10/04

Conference

Conference5th International Conference on Advanced Semiconductor Devices and Microsystems
CitySmolenice
Period17/10/0421/10/04

Abstract

Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarboxylic acids are very interesting as structural and selective etchants and Br-2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.