Structural modifications of InAs based materials for mid-infrared optoelectronic devices

Physics

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Published

Standard

Structural modifications of InAs based materials for mid-infrared optoelectronic devices. / Nohavica, D ; Krier, A .
ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. ed. / J Osvald; S Hascik. New York: IEEE, 2004. p. 203-206.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Nohavica, D & Krier, A 2004, Structural modifications of InAs based materials for mid-infrared optoelectronic devices. in J Osvald & S Hascik (eds), ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. IEEE, New York, pp. 203-206, 5th International Conference on Advanced Semiconductor Devices and Microsystems, Smolenice, 17/10/04. <http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=1441195>

APA

Nohavica, D., & Krier, A. (2004). Structural modifications of InAs based materials for mid-infrared optoelectronic devices. In J. Osvald, & S. Hascik (Eds.), ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 203-206). IEEE. http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=1441195

Vancouver

Nohavica D, Krier A. Structural modifications of InAs based materials for mid-infrared optoelectronic devices. In Osvald J, Hascik S, editors, ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. New York: IEEE. 2004. p. 203-206

Author

Nohavica, D ; Krier, A . / Structural modifications of InAs based materials for mid-infrared optoelectronic devices. ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems. editor / J Osvald ; S Hascik. New York : IEEE, 2004. pp. 203-206

Bibtex

@inproceedings{75acb600c3614a6e9f0b7a884632f272,

title = "Structural modifications of InAs based materials for mid-infrared optoelectronic devices",

abstract = "Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarboxylic acids are very interesting as structural and selective etchants and Br-2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.",

author = "D Nohavica and A Krier",

year = "2004",

language = "English",

isbn = "0-7803-8535-7",

pages = "203--206",

editor = "J Osvald and S Hascik",

booktitle = "ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems",

publisher = "IEEE",

note = "5th International Conference on Advanced Semiconductor Devices and Microsystems ; Conference date: 17-10-2004 Through 21-10-2004",

}

RIS

TY - GEN

T1 - Structural modifications of InAs based materials for mid-infrared optoelectronic devices

AU - Nohavica, D

AU - Krier, A

PY - 2004

Y1 - 2004

N2 - Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarboxylic acids are very interesting as structural and selective etchants and Br-2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.

AB - Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarboxylic acids are very interesting as structural and selective etchants and Br-2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.

M3 - Conference contribution/Paper

SN - 0-7803-8535-7

SP - 203

EP - 206

BT - ASDAM 2004: The Fifth International Conference on Advanced Semiconductor Devices and Microsystems

A2 - Osvald, J

A2 - Hascik, S

PB - IEEE

CY - New York

T2 - 5th International Conference on Advanced Semiconductor Devices and Microsystems

Y2 - 17 October 2004 through 21 October 2004

ER -

Research

Links