Home > Research > Publications & Outputs > Sub-100-nm negative bend resistance ballistic s...
View graph of relations

Sub-100-nm negative bend resistance ballistic sensors for high spatial resolution magnetic field detection

Research output: Contribution to journalJournal article


Article number062106
<mark>Journal publication date</mark>10/02/2011
<mark>Journal</mark>Applied Physics Letters
Issue number6
Number of pages0
<mark>Original language</mark>English


We report the magnetic field detection properties of ballistic sensors utilizing the negative bend resistance of InSb/In1−xAlxSb quantum well cross junctions as a function of temperature and geometric size. We demonstrate that the maximum responsivity to magnetic field and its linearity increase as the critical device dimension is reduced. This observation deviates from the predictions of the classical billiard ball model unless significant diffuse boundary scattering is included. The smallest device studied has an active sensor area of 35×35 nm2, with a maximum responsivity of 20 kΩ/T, and a noise-equivalent field of 0.87 μT/ at 100 K.

Bibliographic note

© 2011 American Institute of Physics