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Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions

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Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions. / Im, Hyunsik; Pashkin, Yuri; Kim, Yongmin et al.
In: Physica C: Superconductivity and its Applications, Vol. 470, 12.2010, p. S832-S833.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Im, H, Pashkin, Y, Kim, Y, Li, TF, Jung, K, Astafiev, O & Tsai, JS 2010, 'Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions', Physica C: Superconductivity and its Applications, vol. 470, pp. S832-S833. https://doi.org/10.1016/j.physc.2010.02.012

APA

Im, H., Pashkin, Y., Kim, Y., Li, T. F., Jung, K., Astafiev, O., & Tsai, J. S. (2010). Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions. Physica C: Superconductivity and its Applications, 470, S832-S833. https://doi.org/10.1016/j.physc.2010.02.012

Vancouver

Im H, Pashkin Y, Kim Y, Li TF, Jung K, Astafiev O et al. Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions. Physica C: Superconductivity and its Applications. 2010 Dec;470:S832-S833. doi: 10.1016/j.physc.2010.02.012

Author

Im, Hyunsik ; Pashkin, Yuri ; Kim, Yongmin et al. / Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions. In: Physica C: Superconductivity and its Applications. 2010 ; Vol. 470. pp. S832-S833.

Bibtex

@article{268b53d42d15421dac44e835d5991dd1,
title = "Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions",
abstract = "We use tunneling spectroscopy in Al and Nb based superconductor-insulator-superconductor (SIS) junctions to demonstrate the existence of metallic quasiparticle states at the interface of a superconducting electrode and an oxide layer, introducing a new method to directly evaluate the interface quasiparticle areal density of states. Current-voltage (I-V) characteristics typically observed in metal-insulator-superconductor (MIS) junctions are observed in the subgap voltage region. The turn-on voltage of the MIS-type leakage is found to be determined by the superconducting electrode with a smaller gap energy (Delta), and its magnitude depends on the nature of the interface. Our experiment suggests that the interface plays a key role in contributing to the subgap leakage influencing the performance of superconducting circuits. ",
author = "Hyunsik Im and Yuri Pashkin and Yongmin Kim and Li, {T. F.} and Kyooho Jung and O. Astafiev and Tsai, {J. S.}",
year = "2010",
month = dec,
doi = "10.1016/j.physc.2010.02.012",
language = "English",
volume = "470",
pages = "S832--S833",
journal = "Physica C: Superconductivity and its Applications",
issn = "0921-4534",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Subgap leakage and interface states in superconductor-insulator-superconductor tunnel junctions

AU - Im, Hyunsik

AU - Pashkin, Yuri

AU - Kim, Yongmin

AU - Li, T. F.

AU - Jung, Kyooho

AU - Astafiev, O.

AU - Tsai, J. S.

PY - 2010/12

Y1 - 2010/12

N2 - We use tunneling spectroscopy in Al and Nb based superconductor-insulator-superconductor (SIS) junctions to demonstrate the existence of metallic quasiparticle states at the interface of a superconducting electrode and an oxide layer, introducing a new method to directly evaluate the interface quasiparticle areal density of states. Current-voltage (I-V) characteristics typically observed in metal-insulator-superconductor (MIS) junctions are observed in the subgap voltage region. The turn-on voltage of the MIS-type leakage is found to be determined by the superconducting electrode with a smaller gap energy (Delta), and its magnitude depends on the nature of the interface. Our experiment suggests that the interface plays a key role in contributing to the subgap leakage influencing the performance of superconducting circuits. 

AB - We use tunneling spectroscopy in Al and Nb based superconductor-insulator-superconductor (SIS) junctions to demonstrate the existence of metallic quasiparticle states at the interface of a superconducting electrode and an oxide layer, introducing a new method to directly evaluate the interface quasiparticle areal density of states. Current-voltage (I-V) characteristics typically observed in metal-insulator-superconductor (MIS) junctions are observed in the subgap voltage region. The turn-on voltage of the MIS-type leakage is found to be determined by the superconducting electrode with a smaller gap energy (Delta), and its magnitude depends on the nature of the interface. Our experiment suggests that the interface plays a key role in contributing to the subgap leakage influencing the performance of superconducting circuits. 

U2 - 10.1016/j.physc.2010.02.012

DO - 10.1016/j.physc.2010.02.012

M3 - Journal article

VL - 470

SP - S832-S833

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

ER -