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Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures

Research output: Contribution to journalJournal article


Article number232104
<mark>Journal publication date</mark>7/06/2010
<mark>Journal</mark>Applied Physics Letters
Issue number23
Number of pages3
Pages (from-to)-
<mark>Original language</mark>English


Zener interband tunneling through a potential profile induced by two top gates in the plane of the two-dimensional electron gas (2DEG) of a doped narrow-gap quantum well system is studied when the gates are biased differently. In contrast to the case of resonant transport through a potential profile created by a single gate these resonances exhibit only a weak dependence on temperature. We present results for a system based on an InSb quantum well and show that narrow resonances are maintained up to room temperature. Such narrow resonances may be exploited for voltage sensing at elevated temperatures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3436725]