12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Suppression of thermal broadening via Zener tun...
View graph of relations

« Back

Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures

Research output: Contribution to journalJournal article

Published

???articleNumber???232104
Journal publication date7/06/2010
JournalApplied Physics Letters
Journal number23
Volume96
Number of pages3
Pages-
Original languageEnglish

Abstract

Zener interband tunneling through a potential profile induced by two top gates in the plane of the two-dimensional electron gas (2DEG) of a doped narrow-gap quantum well system is studied when the gates are biased differently. In contrast to the case of resonant transport through a potential profile created by a single gate these resonances exhibit only a weak dependence on temperature. We present results for a system based on an InSb quantum well and show that narrow resonances are maintained up to room temperature. Such narrow resonances may be exploited for voltage sensing at elevated temperatures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3436725]