TY - JOUR

T1 - Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures

AU - Kyriakou, Ioanna

AU - Jefferson, John H.

AU - Lambert, Colin J.

PY - 2010/6/7

Y1 - 2010/6/7

N2 - Zener interband tunneling through a potential profile induced by two top gates in the plane of the two-dimensional electron gas (2DEG) of a doped narrow-gap quantum well system is studied when the gates are biased differently. In contrast to the case of resonant transport through a potential profile created by a single gate these resonances exhibit only a weak dependence on temperature. We present results for a system based on an InSb quantum well and show that narrow resonances are maintained up to room temperature. Such narrow resonances may be exploited for voltage sensing at elevated temperatures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3436725]

AB - Zener interband tunneling through a potential profile induced by two top gates in the plane of the two-dimensional electron gas (2DEG) of a doped narrow-gap quantum well system is studied when the gates are biased differently. In contrast to the case of resonant transport through a potential profile created by a single gate these resonances exhibit only a weak dependence on temperature. We present results for a system based on an InSb quantum well and show that narrow resonances are maintained up to room temperature. Such narrow resonances may be exploited for voltage sensing at elevated temperatures. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3436725]

U2 - 10.1063/1.3436725

DO - 10.1063/1.3436725

M3 - Journal article

VL - 96

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 232104

ER -