Home > Research > Publications & Outputs > The morphology of GaSb/GaAs nanostructures grow...
View graph of relations

The morphology of GaSb/GaAs nanostructures grown by MBE

Research output: Contribution to conference - Without ISBN/ISSN Poster

Published

Standard

The morphology of GaSb/GaAs nanostructures grown by MBE. / Young, Robert.
2012. Poster session presented at IOP One-Day Quantum Dot Meeting , Bristol, United Kingdom.

Research output: Contribution to conference - Without ISBN/ISSN Poster

Harvard

Young, R 2012, 'The morphology of GaSb/GaAs nanostructures grown by MBE', IOP One-Day Quantum Dot Meeting , Bristol, United Kingdom, 5/01/12.

APA

Young, R. (2012). The morphology of GaSb/GaAs nanostructures grown by MBE. Poster session presented at IOP One-Day Quantum Dot Meeting , Bristol, United Kingdom.

Vancouver

Young R. The morphology of GaSb/GaAs nanostructures grown by MBE. 2012. Poster session presented at IOP One-Day Quantum Dot Meeting , Bristol, United Kingdom.

Author

Young, Robert. / The morphology of GaSb/GaAs nanostructures grown by MBE. Poster session presented at IOP One-Day Quantum Dot Meeting , Bristol, United Kingdom.

Bibtex

@conference{94caef42e3294a34a598d4fd7cd9ef53,
title = "The morphology of GaSb/GaAs nanostructures grown by MBE",
abstract = "GaSb quantum dots embedded in GaAs-based device structures have exciting potential in a number of emerging electronic and optoelectronic applications. They are a type-II system whose band-structure provides strong confinement for heavy-holes and no confinement for electrons. Despite this type-II nature, excitons can still be bound to GaSb dots, with the Coulomb interaction dominating the physics of the electron{\textquoteright}s binding.",
author = "Robert Young",
year = "2012",
month = jan,
day = "5",
language = "English",
note = "IOP One-Day Quantum Dot Meeting ; Conference date: 05-01-2012",

}

RIS

TY - CONF

T1 - The morphology of GaSb/GaAs nanostructures grown by MBE

AU - Young, Robert

PY - 2012/1/5

Y1 - 2012/1/5

N2 - GaSb quantum dots embedded in GaAs-based device structures have exciting potential in a number of emerging electronic and optoelectronic applications. They are a type-II system whose band-structure provides strong confinement for heavy-holes and no confinement for electrons. Despite this type-II nature, excitons can still be bound to GaSb dots, with the Coulomb interaction dominating the physics of the electron’s binding.

AB - GaSb quantum dots embedded in GaAs-based device structures have exciting potential in a number of emerging electronic and optoelectronic applications. They are a type-II system whose band-structure provides strong confinement for heavy-holes and no confinement for electrons. Despite this type-II nature, excitons can still be bound to GaSb dots, with the Coulomb interaction dominating the physics of the electron’s binding.

M3 - Poster

T2 - IOP One-Day Quantum Dot Meeting

Y2 - 5 January 2012

ER -