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Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology

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Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology. / Sachat, Alexandros; Reparaz, J; Spiece, Jean; Alonso, M; Goni, A; Vaccaro, P; Wagner, M; Kolosov, Oleg Victor; Torres, C; Alzina, F.

In: Nanotechnology, Vol. 28, No. 50, 505704, 21.11.2017.

Research output: Contribution to journalJournal article

Harvard

Sachat, A, Reparaz, J, Spiece, J, Alonso, M, Goni, A, Vaccaro, P, Wagner, M, Kolosov, OV, Torres, C & Alzina, F 2017, 'Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology', Nanotechnology, vol. 28, no. 50, 505704. https://doi.org/10.1088/1361-6528/aa9497

APA

Sachat, A., Reparaz, J., Spiece, J., Alonso, M., Goni, A., Vaccaro, P., Wagner, M., Kolosov, O. V., Torres, C., & Alzina, F. (2017). Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology. Nanotechnology, 28(50), [505704]. https://doi.org/10.1088/1361-6528/aa9497

Vancouver

Sachat A, Reparaz J, Spiece J, Alonso M, Goni A, Vaccaro P et al. Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology. Nanotechnology. 2017 Nov 21;28(50). 505704. https://doi.org/10.1088/1361-6528/aa9497

Author

Sachat, Alexandros ; Reparaz, J ; Spiece, Jean ; Alonso, M ; Goni, A ; Vaccaro, P ; Wagner, M ; Kolosov, Oleg Victor ; Torres, C ; Alzina, F. / Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology. In: Nanotechnology. 2017 ; Vol. 28, No. 50.

Bibtex

@article{c910018f36a345c28060a59f4805a50b,
title = "Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology",
abstract = "We report on structural, compositional, and thermal characterization of self-assembled in-plane epitaxial Si1-xGex alloy nanowires grown by molecular beam epitaxy on Si (001) substrates. The thermal properties were studied by means of scanning thermal microscopy, while the microstructural characteristics, the spatial distribution of the elemental composition of the alloy nanowires and the sample surface were investigated by transmission electron microscopy and energy dispersive x-ray microanalysis. We provide new insights regarding the morphology of the in-plane nanostructures, their size-dependent gradient chemical composition, and the formation of a 5 nm thick wetting layer on the Si substrate surface. In addition, we directly probe heat transfer between a heated scanning probe sensor and Si1-xGex alloy nanowires of different morphological characteristics and we quantify their thermal resistance variations. We correlate the variations of the thermal signal to the dependence of the heat spreading with the cross-sectional geometry of the nanowires using finite element method simulations. With this method we determine the thermal conductivity of the nanowires with values in the range of 2-3 Wm-1K-1. These results provide valuable information in growth processes and show the great capability of the scanning thermal microscopy technique in ambient environment for nanoscale thermal studies, otherwise not possible using conventional tech-niques.",
keywords = "SThM, scanning thermal, nanowires, nanoscale thermal transport",
author = "Alexandros Sachat and J Reparaz and Jean Spiece and M Alonso and A Goni and P Vaccaro and M Wagner and Kolosov, {Oleg Victor} and C Torres and F Alzina",
year = "2017",
month = nov
day = "21",
doi = "10.1088/1361-6528/aa9497",
language = "English",
volume = "28",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "50",

}

RIS

TY - JOUR

T1 - Thermal transport in epitaxial Si1-xGex alloy nanowires with varying composition and morphology

AU - Sachat, Alexandros

AU - Reparaz, J

AU - Spiece, Jean

AU - Alonso, M

AU - Goni, A

AU - Vaccaro, P

AU - Wagner, M

AU - Kolosov, Oleg Victor

AU - Torres, C

AU - Alzina, F

PY - 2017/11/21

Y1 - 2017/11/21

N2 - We report on structural, compositional, and thermal characterization of self-assembled in-plane epitaxial Si1-xGex alloy nanowires grown by molecular beam epitaxy on Si (001) substrates. The thermal properties were studied by means of scanning thermal microscopy, while the microstructural characteristics, the spatial distribution of the elemental composition of the alloy nanowires and the sample surface were investigated by transmission electron microscopy and energy dispersive x-ray microanalysis. We provide new insights regarding the morphology of the in-plane nanostructures, their size-dependent gradient chemical composition, and the formation of a 5 nm thick wetting layer on the Si substrate surface. In addition, we directly probe heat transfer between a heated scanning probe sensor and Si1-xGex alloy nanowires of different morphological characteristics and we quantify their thermal resistance variations. We correlate the variations of the thermal signal to the dependence of the heat spreading with the cross-sectional geometry of the nanowires using finite element method simulations. With this method we determine the thermal conductivity of the nanowires with values in the range of 2-3 Wm-1K-1. These results provide valuable information in growth processes and show the great capability of the scanning thermal microscopy technique in ambient environment for nanoscale thermal studies, otherwise not possible using conventional tech-niques.

AB - We report on structural, compositional, and thermal characterization of self-assembled in-plane epitaxial Si1-xGex alloy nanowires grown by molecular beam epitaxy on Si (001) substrates. The thermal properties were studied by means of scanning thermal microscopy, while the microstructural characteristics, the spatial distribution of the elemental composition of the alloy nanowires and the sample surface were investigated by transmission electron microscopy and energy dispersive x-ray microanalysis. We provide new insights regarding the morphology of the in-plane nanostructures, their size-dependent gradient chemical composition, and the formation of a 5 nm thick wetting layer on the Si substrate surface. In addition, we directly probe heat transfer between a heated scanning probe sensor and Si1-xGex alloy nanowires of different morphological characteristics and we quantify their thermal resistance variations. We correlate the variations of the thermal signal to the dependence of the heat spreading with the cross-sectional geometry of the nanowires using finite element method simulations. With this method we determine the thermal conductivity of the nanowires with values in the range of 2-3 Wm-1K-1. These results provide valuable information in growth processes and show the great capability of the scanning thermal microscopy technique in ambient environment for nanoscale thermal studies, otherwise not possible using conventional tech-niques.

KW - SThM

KW - scanning thermal

KW - nanowires

KW - nanoscale thermal transport

U2 - 10.1088/1361-6528/aa9497

DO - 10.1088/1361-6528/aa9497

M3 - Journal article

VL - 28

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 50

M1 - 505704

ER -